|
|
Número de pieza | AP25G45GEM | |
Descripción | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP25G45GEM (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP25G45GEM
Pb Free Plating Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
▼ High Input Impedance
▼ High Pick Current Capability
▼ 4.5V Gate Drive
▼ Strobe Flash Applications
C
C
C
C
SO-8
G
E
E
E
VCE
ICP
G
450V
150A
C
E
Absolute Maximum Ratings
Symbol
Parameter
VCE
VGE
IGEP
ICP
PD@TC=25℃1
TSTG
TJ
Collector-Emitter Voltage
Gate-Emitter Voltage
Pulsed Gate-Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
www.DataSheet.net/
Rating
450
±6
±8
150
2.5
-55 to 150
-55 to 150
Units
V
V
V
A
W
℃
℃
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
IGES
Gate-Emitter Leakage Current
VGE=± 6V, VCE=0V
- - 10
ICES
Collector-Emitter Leakage Current (Tj=25℃)
VCE=450V, VGE=0V
- - 10
VCE(sat)
Collector-Emitter Saturation Voltage VGE=4.5V, ICP=150A (Pulsed)
- 68
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
0.35 - 1.2
Qg Total Gate Charge
IC=50A
- 64.5 -
Qge Gate-Emitter Charge
VCE=360V
-7-
Qgc Gate-Collector Charge
VGE=4.5V
- 30 -
td(on)
Turn-on Delay Time
VCC=225V
- 11.5 -
tr Rise Time
td(off)
Turn-off Delay Time
IC=50A
RG=25Ω
- 24.5 -
- 150 -
tf Fall Time
VGE=10V
- 3.3 -
Cies Input Capacitance
VGE=0V
- 2227 -
Coes Output Capacitance
VCE=25V
- 200 -
Cres
RthJA1
Reverse Transfer Capacitance f=1.0MHz
Thermal Resistance Junction-Ambient
- 79 -
- - 50
Units
uA
uA
V
V
nC
nC
nC
ns
ns
ns
µs
pF
pF
pF
℃/W
Notes:
1.Surface mounted on 1 in2 copper pad of FR4 board ; 125℃/W when mounted on Min. copper pad.
Data and specifications subject to change without notice
200411031
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet AP25G45GEM.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP25G45GEM | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Advanced Power Electronics |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |