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PDF 2N5661 Data sheet ( Hoja de datos )
| Número de pieza | 2N5661 | |
| Descripción | NPN POWER SILICON TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N5661 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/454
Devices
2N5660
2N5661
2N5662
2N5663
Qualified Level
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +250C
@ TC = +1000C
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Symbol
Symbol
VCEO
VCBO
VCER
VEBO
IB
IC
PT
TJ, Tstg
2N5660
2N5661
2N5660 2N5661
2N5662 2N5663
200 300
250 400
250 400
6.0
0.5
2.0
2N5660
2N5661
2.0(1)
20(3)
2N5662
2N5663
1.0(2)
15(4)
-65 to +200
2N5662
2N5663
Thermal Resistance, Junction-to-Case
RθJC
Junction-to-Ambient RθJA
1) Derate linearly 11.4 mW/0C for TA >+ 250C
2) Derate linearly 5.7 mW/0C for TA > +250C
3) Derate linearly 200 mW/0C for TC > +1000C
4) Derate linearly 150 mW/0C for TC > +1000C
5.0
87.5
6.67
145.8
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
2N5660, 2N5662
2N5661, 2N5663
V(BR)CEO
Collector-Base Breakdown Voltage
IC = 10 mAdc, RBE = 100Ω
2N5660, 2N5662
2N5661, 2N5663
V(BR)CER
Emitter-Base Breakdown Voltage
IE = 10 µAdc
V(BR)EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
Unit
0C/W
Min.
200
300
250
400
6.0
TO-66*
(TO-213AA)
2N5660, 2N5661
TO-5*
2N5662, 2N5663
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
Vdc
120101
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N5661.PDF ] | |
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