PDF MGF4921AM Data sheet ( Hoja de datos )

Número de pieza	MGF4921AM
Descripción	SUPER LOW NOISE InGaAs HEMT
Fabricantes	Mitsubishi Electric Semiconductor
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No Preview Available ! < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES ・Low noise figure NFmin. = 0.35dB (Typ.) @ f=2.4GHz NFmin. = 0.35dB (Typ.) @ f=4GHz ・High associated gain Gs = 18.0dB (Typ.) @ f=2.4GHz Gs = 13.0dB (Typ.) @ f=4GHz Fig.1 APPLICATION L to C band low noise amplifiers QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10~25mA ORDERING INFORMATION Tape & reel 15000pcs/reel www.DataSheet.net/ RoHS COMPLIANT MGF4921AM is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID Parameter Gate to drain voltage Gate to source voltage Drain current PT Total power dissipation Tch Channel temperature Tstg Storage temperature ELECTRICAL CHARACTERISTICS Symbol Parameter (Ta=25C ) Ratings Unit -3 V -3 V IDSS mA 130 mW 125 C -55 to +125 C (Ta=25C) Test conditions V(BR)GDO Gate to drain breakdown voltage IG=-78A IGSS Gate to source leakage current VGS=-2V,VDS=0V IDSS Saturated drain current VGS=0V,VDS=2V VGS(off) Gate to source cut-off voltage VDS=2V,ID=390A Gs Associated gain VDS=2V, NFmin. Minimum noise figure ID=10mA, f=2.4GHz Gs Associated gain VDS=2V, NFmin. Minimum noise figure ID=15mA, f=4GHz Note 1: Gs and NFmin. @2.4GHz are not tested. Note 2: Gs and NFmin. @4GHz are tested with sampling inspection. MIN. -3.5 -- 30 -0.2 -- -- 11.5 -- Limits TYP. -- -- -- -- 18 0.35 13 0.35 MAX -- 50 150 -1.5 -- -- -- 0.55 Publication Date : Oct., 2011 1 Unit V A mA V dB dB dB dB Datasheet pdf - http://www.DataSheet4U.co.kr/ 1 page < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package S PARAMETERS (VDS=2V,ID=10mA,Ta=room temperature) Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 S11 (mag) (ang) 0.951 -31.0 0.824 -60.7 0.684 -89.5 0.557 -120.4 0.481 -149.3 0.458 -177.0 0.461 157.6 0.485 136.9 0.531 120.3 0.576 104.2 0.615 90.3 0.652 78.9 0.710 67.2 0.757 55.5 0.769 44.9 0.798 37.2 S21 (mag) (ang) 6.561 150.5 5.902 123.3 5.133 99.2 4.387 77.6 3.755 58.9 3.252 42.1 2.833 26.6 2.496 12.2 2.232 -1.0 2.029 -14.0 1.849 -27.2 1.699 -39.6 1.565 -52.8 1.409 -67.1 1.247 -79.8 1.104 -91.4 S12 (mag) (ang) 0.040 74.0 0.074 59.6 0.101 47.8 0.121 37.9 0.139 29.8 0.156 22.4 0.170 15.3 0.185 7.9 0.199 0.9 0.213 -6.6 0.227 -14.5 0.237 -22.2 0.252 -30.5 0.257 -39.5 0.259 -47.5 0.265 -54.5 S22 (mag) (ang) 0.394 -22.9 0.330 -44.8 0.256 -66.3 0.186 -94.3 0.138 -126.6 0.127 -165.0 0.149 160.4 0.194 135.0 0.235 117.7 0.281 105.0 0.342 95.0 0.403 83.4 0.460 73.6 0.520 63.7 0.596 54.3 0.658 43.1 www.DataSheet.net/ Measurement plane (2.5mm) Recommended foot pattern; FR4 (r=4.8@1MHz, t=0.8mm) Note: We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales offices. Publication Date : Oct., 2011 5 Datasheet pdf - http://www.DataSheet4U.co.kr/ 5 Page

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Número de pieza	Descripción	Fabricantes
MGF4921AM	SUPER LOW NOISE InGaAs HEMT	Mitsubishi Electric Semiconductor

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