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Mitsubishi Electric Semiconductor에서 제조한 전자 부품 MGF4931AM은 전자 산업 및 응용 분야에서
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부품번호 MGF4931AM 기능
기능 SUPER LOW NOISE InGaAs HEMT
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MGF4931AM 데이터시트, 핀배열, 회로
June/2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4931AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
DESCRIPTION
The MGF4931AM super-low noise HEMT (High Electron Mobility
Transistor) is designed for use in S to Ku band amplifiers.
The 4pin flat lead package is small-thin size, and offers high
cost performance.
Outline Drawing
FEATURES
Low noise figure
@ f=12GHz
NFmin. = 0.6dB (Typ.)
High associated gain
@ f=12GHz
Gs = 11.5dB (Typ.)
APPLICATION
S to Ku band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=7.5mA
Fig.1
MITSUBISHI Proprietary
Not to be reproduced or disclosed
without permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & reel 3000pcs./reel
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making
semiconductor products better and more reliable , but there is always the
possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury , fire or property damage. Remember to give due
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consideration to safety when making your circuit designs , with appropriate
measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of
non-flammble material or (iii) prevention against any malfunction or mishap.
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
VGSO
ID
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
PT Total power dissipation
Tch Channel temperature
Tstg Storage temperature
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
(Ta=25°C )
Ratings
-4
-4
IDSS
50
125
-55 to +125
Unit
V
V
mA
mW
°C
°C
(Ta=25°C )
Test conditions
V(BR)GDO
IGSS
IDSS
VGS(off)
Gs
NFmin.
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Associated gain
Minimum noise figure
IG=-10µA
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500µA
VDS=2V,
ID=7.5mA,f=12GHz
MIN.
-3
--
10
-0.1
10.0
--
Limits
TYP.
--
--
--
--
11.5
0.6
MAX
--
50
60
-1.5
--
0.8
Unit
V
µA
mA
V
dB
dB
MITSUBISHI
(1/5)
June/2004
Datasheet pdf - http://www.DataSheet4U.co.kr/




MGF4931AM pdf, 반도체, 판매, 대치품
June/2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4931AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
S Parameters (Conditions: VDS=2V, ID=7.5mA, Ta=25°C)
Freq.
f (GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Magn.
0.997
0.992
0.919
0.850
0.779
0.700
0.645
0.574
0.509
0.475
0.480
0.488
0.507
0.513
S11
Angle(deg.)
-14.6
-30.0
-44.7
-59.1
-74.9
-94.1
-105.9
-122.0
-142.8
-165.1
175.2
157.4
142.1
126.2
Magn.
4.101
4.175
4.122
4.132
4.110
4.003
3.925
3.863
3.734
3.523
3.293
3.055
2.864
2.720
S21
Angle(deg.)
163.3
148.0
131.5
116.7
101.9
84.5
73.2
59.9
45.5
30.1
16.0
1.8
-10.6
-22.8
Magn.
0.016
0.033
0.047
0.059
0.069
0.075
0.080
0.088
0.094
0.096
0.100
0.104
0.112
0.123
S12
Angle(deg.)
77.8
67.7
56.8
45.9
38.7
29.2
26.5
23.3
17.5
12.1
8.2
4.2
1.2
-3.1
Magn.
0.732
0.707
0.675
0.634
0.604
0.506
0.484
0.454
0.407
0.375
0.362
0.352
0.331
0.295
S22
Angle(deg.)
-12.4
-23.8
-35.3
-46.0
-55.6
-70.8
-75.6
-83.3
-94.0
-109.8
-126.9
-144.4
-160.3
-178.0
Noise Parameters (VDS=2V,ID=7.5mA, Ta=25°C)
f
(GHz)
Rn
Magn. Angle(deg.) ( )
NFmin
(dB)
www.DataSheet.net/
Reference point
Reference point
2.5mm
Substrate: Teflon
(εr=2.6, thickness=0.4mm)
(4- 0.4: through-hole)
MITSUBISHI
(4/5)
June/2004
Datasheet pdf - http://www.DataSheet4U.co.kr/

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MGF4931AM

SUPER LOW NOISE InGaAs HEMT

Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

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