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Número de pieza | MGF4934AM | |
Descripción | SUPER LOW NOISE InGaAs HEMT | |
Fabricantes | Mitsubishi Electric Semiconductor | |
Logotipo | ||
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MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF4934AM/BM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
DESCRIPTION
The MGF4934BM super-low noise HEMT (High Electron Mobility
Transistor) is designed for use in S to Ku band amplifiers.
The 4pin flat lead package is small-thin size, and offers high cost
performance.
Outline Drawing
FEATURES
Low noise figure
@ f=12GHz
NFmin. = 0.50dB (Typ.)
High associated gain
@ f=12GHz
Gs = 12.5dB (Typ.)
APPLICATION
S to Ku band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
Fig.1
MITSUBISHI Proprietary
Not to be reproduced or disclosed
without permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & reel 3000pcs/reel
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making
semiconductor products better and more reliable, but there is always the
possibility that trouble may occur with them. Trouble with semiconductors may
lead to personal injury, fire or property damage. Remember to give due
consideration to safetywww.DataSheet.net/ when making your circuit designs, with appropriate
measure such as (I) placement of substitutive, auxiliary circuits, (ii) use of non-
flammable material or (iii) prevention against any malfunction or mishap.
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
VGSO
ID
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
PT Total power dissipation
Tch Channel temperature
Tstg Storage temperature
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
(Ta=25°C )
Ratings
-4
-4
IDSS
50
125
-55 to +125
Unit
V
V
mA
mW
°C
°C
(Ta=25°C )
Test conditions
V(BR)GDO
IGSS
IDSS
VGS(off)
Gs
NFmin.
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Associated gain
Minimum noise figure
IG=-10µA
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500µA
VDS=2V,
ID=10mA,f=12GHz
MIN.
-3.5
--
12
-0.1
11.5
--
Limits
TYP.
--
--
--
--
12.5
0.50
MAX
--
50
60
-1.5
--
0.80
Unit
V
µA
mA
V
dB
dB
MITSUBISHI
(1/6)
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page May/2008
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF4934AM/BM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
S PARAMETERS
(VDS=0V,VGS=0V,Ta=room temperature)
Freq.
S11
S21
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
(mag)
0.995
0.990
0.991
0.983
0.976
0.961
0.951
0.940
0.913
0.902
0.887
0.883
0.884
0.889
0.896
0.907
0.911
0.919
0.924
0.919
0.921
0.924
0.928
0.950
0.970
0.978
(ang)
-12.5
-24.6
-37.5
-53.3
-67.1
-81.0
-95.7
-112.3
-130.9
-151.8
-175.9
159.0
134.4
112.1
93.6
78.5
66.4
55.9
47.1
38.7
31.2
24.3
18.1
11.6
5.4
-1.5
(mag)
0.008
0.018
0.032
0.051
0.074
0.099
0.130
0.163
0.196
0.229
0.256
0.274
0.276
0.268
0.257
0.241
0.228
0.221
0.217
0.204
0.192
0.179
0.168
0.159
0.149
0.141
(ang)
96.4
100.5
99.5
92.5
85.0
76.0
65.5
53.6
41.0
27.1
12.0
-2.5
-16.9
-30.5
-42.0
-51.5
-59.6
-67.5
-76.6
-87.1
-95.0
-103.1
-110.3
-116.7
-122.1
-128.2
S12
(mag) (ang)
0.008
0.018
0.032
0.051
0.075
0.100
97.7
100.7
98.9
94.0
85.5
76.5
0.131
0.163
0.198
65.3
54.3
41.3
0.230
0.257
0.273
0.278
0.270
0.256
0.241
0.227
0.221
0.218
27.3
12.7
-2.7
-17.2
-30.2
-42.0
-51.1
-59.8
-67.4
-76.5
0.204
0.193
0.179
-86.9
-95.3
-103.2
0.168
0.157
0.150
0.141
-110.6
-116.3
-122.1
-128.3
S22
(mag)
0.673
0.673
0.671
0.694
0.697
0.704
0.719
0.730
0.745
0.759
0.774
0.783
0.794
0.800
0.807
0.811
0.807
0.815
0.817
0.814
0.810
0.811
0.817
0.816
0.830
0.844
(ang)
165.1
152.1
138.7
127.4
112.5
97.6
83.4
70.8
59.2
49.3
41.2
34.8
29.2
24.0
18.7
13.2
7.1
0.6
-6.9
-14.8
-23.2
-31.2
-39.2
-46.5
-53.8
-61.8
(VDS=0V,VGS=-2.5V,Ta=room temperature)
Freq.
S11
S21
(GHz) (mag) (ang) (mag) (ang)
1 0.993 -9.6 0.022 78.7
2 0.996 -18.9 0.044 68.6
3 0.992 -28.3 0.065 59.8
4 0.987 -39.7 0.092 48.4
5 0.981 -49.5 0.112 38.8
6 0.975 -59.1 0.131 28.8
7 0.968 -68.8 0.150 19.2
8
0.963 -79.2 0.169
7.7
9 0.949 -89.9 0.185 -4.5
10 0.943 -102.2 0.200 -18.4
11 0.932 -117.2 0.209 -34.7
12 0.929 -134.6 0.207 -52.4
13 0.932 -155.8 0.187 -73.4
14 0.938 -179.2 0.148 -96.3
15 0.940 156.2 0.091 -119.2
16 0.948 133.1 0.033 -137.6
17
0.951 112.7 0.018
9.9
18
0.952 95.4 0.058
0.6
19 0.956 80.9 0.091 -11.2
20 0.951 68.1 0.117 -24.5
21 0.953 57.2 0.138 -37.5
22 0.946 47.5 0.150 -49.7
23 0.950 38.8 0.157 -60.4
24 0.965 30.8 0.161 -69.7
25 0.982 23.3 0.162 -77.8
26 0.993 15.4 0.163 -85.8
www.DataSheet.net/
S12
(mag) (ang)
0.022 79.0
0.044 68.8
0.065 59.2
0.092 48.4
0.112 38.8
0.130 29.1
0.150 19.2
0.168
8.0
0.186 -4.3
0.200 -18.5
0.209 -34.4
0.207 -52.8
0.188 -73.6
0.149 -96.7
0.091 -119.3
0.034 -136.8
0.018
9.0
0.058
0.5
0.090 -11.3
0.118 -24.3
0.137 -37.3
0.150 -49.6
0.157 -60.2
0.161 -70.1
0.162 -77.6
0.163 -85.8
S22
(mag)
0.998
1.000
0.991
0.984
0.986
0.980
0.975
0.968
0.959
0.949
0.943
0.932
0.928
0.942
0.947
0.953
0.957
0.965
0.964
0.960
0.954
0.947
0.952
0.963
0.981
0.995
(ang)
-10.6
-21.3
-31.2
-42.1
-51.5
-60.6
-70.1
-80.7
-92.1
-105.6
-121.1
-139.6
-160.7
176.8
153.6
132.4
112.9
94.8
79.2
64.6
50.5
37.4
24.9
13.3
1.6
-10.3
MITSUBISHI
(5/6)
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MGF4934AM.PDF ] |
Número de pieza | Descripción | Fabricantes |
MGF4934AM | SUPER LOW NOISE InGaAs HEMT | Mitsubishi Electric Semiconductor |
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