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부품번호 | MGF4964BL 기능 |
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기능 | Low Noise GaAs HEMT | ||
제조업체 | Mitsubishi Electric Semiconductor | ||
로고 | |||
전체 5 페이지수
< Low Noise GaAs HEMT >
MGF4964BL
Micro-X type plastic package
DESCRIPTION
The MGF4964BL super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in K band amplifiers.
FEATURES
Low noise figure
@ f=20GHz
NFmin. = 0.65dB (Typ.)
High associated gain
@ f=20GHz
Gs = 13.5dB (Typ.)
Outline Drawing
Fig.1
APPLICATION
C to K band low noise amplifiers
QUALITY GRADE
GG
MITSUBISHI Proprietary
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
RECOMMENDED BIAS CONDITIONS
VDS=2V, ID=10mA
ORDERRING INFORMATION
Tape & reel 4000pcs./reel
www.DataSheet.net/
RoHS COMPLIANT
MGF4964BL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VGDO
Gate to drain voltage
VGSO
Gate to source voltage
ID Drain current
PT Total power dissipation
Tch Channel temperature
Tstg Storage temperature
(Ta=25C )
Ratings
-3
-3
IDSS
50
125
-55 to +125
Unit
V
V
mA
mW
C
C
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
(Ta=25C )
Test conditions
V(BR)GDO Gate to drain breakdown voltage
IG=-10A
IGSS Gate to source leakage current
VGS=-2V,VDS=0V
IDSS Saturated drain current
VGS=0V,VDS=2V
VGS(off) Gate to source cut-off voltage
VDS=2V,ID=500A
Gs Associated gain
VDS=2V,
NFmin. Minimum noise figure
ID=10mA,f=20GHz
Note: Gs and NFmin. are tested with sampling inspection.
MIN.
-3
--
15
-0.1
11.5
--
Limits
TYP.
--
--
--
--
13.5
0.65
MAX
--
50
60
-1.5
--
0.90
Unit
V
A
mA
V
dB
dB
Publication Date : Apr., 2011
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
<Low Noise GaAs HEMT>
MGF4964BL
Micro-X type plastic package
S PARAMETERS (Ta=25C, VDS=2V, ID=10mA)
Freq.
(GHz)
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
S11
(mag) (ang)
0.977 -31.7
0.952 -47.5
0.918 -63.5
0.877 -79.7
0.831 -96.3
0.781 -113.7
0.724 -132.0
0.659 -149.5
0.606 -167.7
0.568 175.1
0.516 158.1
0.524 139.7
0.520 124.1
0.541 105.9
0.559 85.8
0.588 68.0
0.614 47.4
0.630 30.5
0.641 13.1
0.666
-3.8
0.669 -20.0
0.656 -37.0
0.646 -54.3
0.611 -69.1
0.572 -88.1
S21
(mag) (ang)
4.626 146.7
4.519 130.5
4.528 114.1
4.467 98.0
4.400 81.8
4.353 65.5
4.221 49.2
4.063 33.7
3.928 18.4
3.829
4.1
3.706
-9.4
3.731 -24.6
3.821 -38.7
3.870 -55.1
3.818 -72.6
3.828 -90.8
3.571 -109.2
3.404 -124.6
3.335 -142.0
3.280 -157.7
3.218 -174.6
3.141 166.5
3.138
3.143
148.2
www.DataSheet.net/
129.0
3.038 106.4
S12
(mag) (ang)
0.024 65.5
0.034 53.4
0.044 41.5
0.052 29.7
0.060 18.4
0.066
6.6
0.071
-6.6
0.071 -19.3
0.070 -31.3
0.069 -41.6
0.060 -55.1
0.063 -60.3
0.050 -65.4
0.044 -67.7
0.049 -70.7
0.052 -76.2
0.060 -92.2
0.057 -108.3
0.055 -123.9
0.053 -137.5
0.055 -160.0
0.056 -178.4
0.055 147.5
0.059 124.6
0.057 98.0
S22
(mag) (ang)
0.592 -26.1
0.576 -39.3
0.553 -51.9
0.526 -65.0
0.497 -77.9
0.464 -91.4
0.422 -105.5
0.379 -118.0
0.340 -131.5
0.310 -143.9
0.271 -153.2
0.270 -171.2
0.277 -179.1
0.292 165.4
0.311 143.4
0.356 123.9
0.371 97.6
0.384 78.9
0.408 62.7
0.425 44.4
0.457 29.9
0.474 16.2
0.482
1.1
0.537
-8.4
0.552 -25.0
NOISE PARAMETERS (Ta=25C, VDS=2V, ID=10mA)
Freq.
(GHz)
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
Γopt
(mag) (ang)
0.73
64.1
0.67
78.7
0.61
94.4
0.56 111.0
0.51 128.5
0.47 146.9
0.43 166.1
0.40 -174.1
0.38 -153.8
0.37 -133.1
0.37 -112.1
0.38 -91.1
0.40 -69.8
0.44 -48.4
0.49 -26.5
0.56 -4.4
Rn
0.20
0.16
0.12
0.09
0.06
0.04
0.03
0.04
0.05
0.07
0.10
0.13
0.17
0.21
0.26
0.30
NF min
(dB)
0.23
0.24
0.25
0.27
0.28
0.30
0.33
0.35
0.39
0.43
0.47
0.52
0.57
0.62
0.67
0.72
Measurement plane (3.2mm)
Recommended foot pattern; RO4003C/ROGERS
(r=3.38, t=0.51mm)
Note: We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales offices.
Publication Date : Apr., 2011
4
Datasheet pdf - http://www.DataSheet4U.co.kr/
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MGF4964BL | Low Noise GaAs HEMT | Mitsubishi Electric Semiconductor |
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