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PDF MGFC42V7177 Data sheet ( Hoja de datos )
| Número de pieza | MGFC42V7177 | |
| Descripción | C band Internally Matched Power GaAs FET | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
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<C band Internally Matched Power GaAs FET>
MGFC42V7177
7.1 - 7.7GHz BAND / 16W
DESCRIPTION
The MGFC42V7177 is an internally impedance-matched GaAs
power FET especially designed for use in 7.1 – 7.7 GHz band
amplifiers. The hermetically sealed metal-ceramic package
guarantees high reliability.
FEATURES
Crass A operation
Internally matched to 50(ohm)
High output power: P1dB = 16 W (typ.) @ P1dB
High power gain: GLP = 8.0 dB (typ.)
High power added efficiency: PAE = 30 % (typ.)
APPLICATIONS
item 01 : 7.1 – 7.7GHz band power amplifier
item 51 : 7.1 – 7.7GHz band digital radio communication
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
Vds = 10 V Ids = 4.5 A Rg = 25
www.DataSheet.net/
Absolute maximum ratings (Ta = 25 C)
Symbol
Parameter
Ratings
VGDO Gate to drain breakdown voltage
-15
VGSO Gate to source breakdown
-15
ID Drain current
12
IGR Reverse gate current
-40
IGF Forward gate current
84
PT *1 Total power dissipation
78.9
Tch Channel temperature
175
Tstg Storage temperature
- 65 to +175
*1: Tc=25C
Unit
V
V
A
mA
mA
W
C
C
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable, but there is always the possibility
that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such as
(I) placement of substitutive , auxiliary circuits , (ii)
use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Electrical characteristics ( Ta = 25° C)
Symbol
Parameter
Test conditions
Limits
Min. Typ.
VGS(off)
Gate to sourse cut-off voltage VDS = 3V, ID = 80mA -2
-3
P1dB
1dB gain comp. output power
41 42
GLP
IDS (RF)
add
Linear Power Gain
Drain Current at P1dB
Power added efficiency
VDS = 10V,
ID = 4.5A,
f=7.1 – 7.7GHz
78
- 4.5
- 30
IM3 *2
3rd order IM distortion
-42 -45
Rth(ch-c) *3 Thermal resistance
Delta Vf Method
-
*2: item -51, 2 tone test, Po=32dBm single carrier level, f=7.7GHz, delta f=10MHz
*3 : Channel to case
Publication Date : May, 2012
1
-
Max.
-4
-
-
-
-
-
1.9
Unit
V
dBm
dB
A
%
dBc
°C/W
Datasheet pdf - http://www.DataSheet4U.co.kr/
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