|
|
PDF MGFC47B3538B Data sheet ( Hoja de datos )
| Número de pieza | MGFC47B3538B | |
| Descripción | C band Internally Matched Power GaAs FET | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MGFC47B3538B (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
<C band Internally Matched Power GaAs FET>
MGFC47B3538B
3.5 – 3.8GHz BAND / 50W
DESCRIPTION
The MGFC47B3538B is an internally impedance-matched GaAs
power FET especially designed for use in 3.5 – 3.8 GHz band
amplifiers. The hermetically sealed metal-ceramic package
guarantees high reliability.
FEATURES
Crass AB operation
Internally matched to 50(ohm)
High output power: Po(SAT) = 50 W (typ.)
High power gain: GP = 10 dB (TPE.) @Po = 37dBm
Distortion: EVM = 2.0% (TPE.) @ Po = 37dBm
Recommended Bias Condition
Vd = 12(V)
ID = 1.5 (A)
Rg = 10 ohm
OUTLINE DRAWING
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
MAXID Maximum drain current
PT *1 Total power dissipation
Tch Channel temperature
Tstg Storage temperature
*1 : Tc=25deg.C
www.DataSheet.net/
(Ta=25deg.C)
Ratings
-15
-10
12
115
175
-55 / +150
Unit
V
V
A
W
deg.C
deg.C
GF-60
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable, but there is always the possibility
that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such as
(I) placement of substitutive , auxiliary circuits , (ii)
use of non-flammable material or (iii) prevention
against any malfunction or mishap.
ELECTRICAL CARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
VGS(off) Gate to source cut-off voltage
VDS = 3V , ID = 100mA
Po(SAT) Output power
GP Power gain
VDS=12V, ID(RF off)=1.5A, f=3.5-3.8GHz
ID Drain current
VDS=12V, ID(RF off)=1.5A, f=3.5-3.8GHz
EVM *2 Error Vector Magnitude
Rth(ch-c) *3 Thermal resistance
Pout=37dBm
delta Vf method
*2 :WiMAX Downlink , 64QA M-3/4, Channel Bandwidth: 7MHz
*3 : Channel-case
Publication Date : May, 2012
1
Limits
Unit
Min. Typ. Max.
-0.5 - -3.0 V
- 47 - dBm
9.0 10.5
-
dB
- 2.0 3
A
-
1.5 2.5
%
-
0.65
1.2 deg.C/W
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MGFC47B3538B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MGFC47B3538B | C band Internally Matched Power GaAs FET | Mitsubishi Electric Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |