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부품번호 | RD02MUS1B 기능 |
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기능 | Silicon MOSFET Power Transistor | ||
제조업체 | Mitsubishi Electric Semiconductor | ||
로고 | |||
전체 9 페이지수
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
OUTLINE DRAWING
DESCRIPTION
RD02MUS1B is a MOS FET type transistor
specifically designed for VHF/UHF RF power
amplifiers applications.
RD02MUS1B improved a drain surge than
RD02MUS1 by optimizing MOSFET structure.
6.0+/-0.15
FEATURES
High power gain:
Pout>2W, Gp>16dB
@Vdd=7.2V,f=175MHz, 520MHz
High Efficiency: 65%typ. (175MHz)
High Efficiency: 65%typ. (520MHz)
INDEX MARK
(Gate)
www.DataSheet.net/
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
2
(0.25)
3
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
(0.25)
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD02MUS1B-101,T112 is a RoHS compliant products.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct.2011
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
40
@f=175MHz
100
35 Po 90
30
Gp
25
80
ηd 70
20 60
15 50
10
5
0
-10
-5
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=200mA
40
30
20
0 5 10 15 20
Pin(dBm)
Pin-Po CHARACTERISTICS
4.0
@f=175MHz
100
3.0 Po 80
ηd
2.0
Ta=25°C
60
f=175MHz
Vdd=7.2V
1.0
Idq=200mA
Idd
40
0.0
0
20
20 40 60 80 100
Pin(mW)
Pin-Po CHARACTERISTICS
40 @f=520MHz 100
35 Po 90
30
25 Gp
80
ηd 70
20 60
15 50
10
5
0
-10
-5
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=200mA
40
30
20
0 5 10 15 20
Pin(dBm)
4.0
3.0
2.0
www.DataSheet.net/
1.0
Pin-Po CHARACTERISTICS
@f=520MHz
Po
ηd
Ta=25°C
f=520MHz
Vdd=7.2V
Idd Idq=200mA
100
80
60
40
0.0
0
20
20 40 60 80 100
Pin(mW)
Vdd-Po CHARACTERISTICS
7
@f=175MHz
1.4
Ta=25°C
6 f=175MHz
Pin=50mW
1.2
Po
5
Idq=200mA
Zg=ZI=50 ohm
1.0
4 Idd 0.8
3 0.6
2 0.4
1 0.2
0 0.0
3 5 7 9 11 13
Vdd(V)
Vdd-Po CHARACTERISTICS
7
@f=520MHz
1.4
Ta=25°C
6 f=520MHz
Pin=50mW
Po 1.2
5
Idq=200mA
Zg=ZI=50 ohm
1.0
4 Idd 0.8
3 0.6
2 0.4
1 0.2
0 0.0
3 5 7 9 11 13
Vdd(V)
Publication Date : Oct.2011
4
Datasheet pdf - http://www.DataSheet4U.co.kr/
4페이지 < Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
RD02MUS1B S-PARAMETER DATA (@Vdd=7.2V, Id=200mA)
Freq.
[MHz]
100
135
150
175
200
250
300
350
400
450
500
520
527
550
600
650
700
750
800
850
900
950
1000
1050
1100
S11
(mag) (ang)
0.847 -132.5
0.828 -144.6
0.824 -148.1
0.817 -152.8
0.816 -156.2
0.816 -161.2
0.820 -164.9
0.827 -167.6
0.835 -169.9
0.844 -171.9
0.854 -173.6
0.858 -174.3
0.859 -174.7
0.862 -175.3
0.871 -176.7
0.878 -178.0
0.883 -179.4
0.890 179.4
0.897 178.3
0.899 177.0
0.905 176.0
0.907 175.1
0.913 174.3
0.915 173.2
0.918 172.6
S21 S12
(mag) (ang) (mag) (ang)
16.923 100.2 0.042
8.9
12.806 90.7
0.042
-0.1
11.555 87.5
0.042
-3.3
9.864 82.8 0.042 -7.6
8.579 78.6 0.041 -11.2
6.712 71.2 0.039 -17.6
5.436 64.9 0.038 -23.0
4.501 59.3 0.036 -28.2
3.813 54.0 0.034 -32.2
3.257 49.3 0.032 -36.5
2.823 44.9 0.031 -39.8
2.668 43.1 0.030 -41.1
2.613 42.6 0.030 -41.9
2.458 40.9 0.029 -43.2
2.161 37.1 0.027 -46.6
1.911 33.5 0.025 -49.5
1.701 30.4 0.024 -51.5
1.522 27.3 0.022 -54.4
1.368 24.4 0.021 -56.1
1.238 21.7 0.019 -58.7
1.123 19.3 0.018 -59.4
1.025 17.1 0.016 -60.7
0.937 14.9 0.015 -62.1
0.859
12.9
www.DataSheet.net/
0.013
-64.4
0.794 11.0 0.012 -64.9
S22
(mag) (ang)
0.621 -118.8
0.598 -130.5
0.591 -133.7
0.590 -138.0
0.594 -141.2
0.609 -145.5
0.628 -148.8
0.653 -151.2
0.675 -153.5
0.699 -155.8
0.723 -157.7
0.732 -158.4
0.735 -158.6
0.743 -159.6
0.763 -161.5
0.781 -162.9
0.798 -164.6
0.811 -166.1
0.824 -167.7
0.836 -169.0
0.845 -170.3
0.853 -171.4
0.861 -172.5
0.870 -173.5
0.874 -174.6
Publication Date : Oct.2011
7
Datasheet pdf - http://www.DataSheet4U.co.kr/
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
RD02MUS1 | Silicon MOSFET Power Transistor | Mitsubishi Electric |
RD02MUS1B | Silicon MOSFET Power Transistor | Mitsubishi Electric Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |