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PDF RD07MUS2B Data sheet ( Hoja de datos )
| Número de pieza | RD07MUS2B | |
| Descripción | RF POWER MOS FET Silicon MOSFET Power Transistor | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
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< Silicon RF Power MOS FET (Discrete) >
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W
DESCRIPTION
RD07MUS2B is a MOS FET type transistor
specifically designed for VHF/UHF/870MHz
RF power amplifiers applications.
FEATURES
High power gain and High Efficiency.
Typical Po Gp ηD
(175MHz) 7.2W 13.8dB 65%
(527MHz) 8W 13.0dB 63%
(870MHz) 7W 11.5dB 58%
Integrated gate protection diode.
APPLICATION
For output stage of high power amplifiers in
VHF/UHF/800MHz-band mobile radio sets.
OUTLINE DRAWING
6.0+/-0.15
INDEX MARK
(Gate)
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
2
(0.25)
3
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
(0.25)
RoHS COMPLIANT
RD07MUS2B is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.www.DataSheet.net/
However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
RATINGS
VDSS Drain to source voltage
Vgs=0V
25
VGSS Gate to source voltage
Vds=0V
-5/+10
Pch Channel dissipation
Tc=25°C
50
Pin Input Power
Zg=Zl=50
0.8*
ID Drain Current
-3
Tch Junction Temperature
- 150
Tstg Storage temperature
- -40 to +125
Rth j-c Thermal resistance
Junction to case
2.5
Note: Above parameters are guaranteed independently.
*: 175MHz spec. is 0.6W
UNIT
V
V
W
W
A
°C
°C
°C/W
Publication Date : Oct．2011
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
< Silicon RF Power MOS FET (Discrete) >
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W
TYPICAL CHARACTERISTICS ( 450-527MHz )
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
f-Po CHARACTERISTICS @f=450-527MHz
50 100
Po
40
80
f-Po CHARACTERISTICS @f=450-527MHz
10 100
Po
8 80
30
ηd
20
Gp
Ta=+25°C
Vdd=7.2V
Pin=0.4W
Idq=250mA
60
40
10
Idd
20
00
450 460 470 480 490 500 510 520 530
f (MHz)
50 Pin-Po CHARACTERISTICS @f=527MH1z00
Ta=+25°C
40 f=527MHz
Vdd=7.2V
Idq=250mA
30
Po
80
60
ηd
20 Gp 40
10 20
Idd
00
0 5 10 15 20 25 30
Pin(dBm)
Vdd-Po CHARACTERISTICS @f=527MHz
25
Ta=+25°C
f =527MHz
20 Pin=0.4W
Idq=250mA
15 Zg=ZI=50 ohm
Po
5
4
3
10 2
Idd
51
00
3 4 5 6 7 8 9 10
Vdd(V)
Publication Date : Oct．2011
6 ηd
4
Idd
2
Ta=+25°C
Vdd=7.2V
Pin=0.4W
Idq=250mA
60
40
20
00
450 460 470 480 490 500 510 520 530
f (MHz)
10 Pin-Po CHARACTERISTICS @f=527MHz 100
Po
8 80
www.DataSheet.net/
6
4
2
ηd
Ta=+25°C
f =527MHz
Vdd=7.2V
Idq=250mA
Idd
60
40
20
0
0.0
0.2 0.4
Pin(W)
0.6
0
0.8
Vgg-Po CHARACTERISTICS @f=527MHz
10
Ta=+25°C
f =527MHz
8 Pin=0.4W
Po
Idq=250mA
Zg=ZI=50 ohm
6
5
4
3
42
Idd
21
00
0 0.4 0.8 1.2 1.6 2
Vgg(V)
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
< Silicon RF Power MOS FET (Discrete) >
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W
Input / Output Impedance VS. Frequency Characteristics
f=175MHz
@Pin=0.3W, Vdd=7.2V,
Idq=250mA(Vgg adj.)
f=155MHz
f=135MHz
Zo=10ohm
Zout* ( f=135, 155, 175MHz)
Zin* ( f=135, 155, 175MHz)
Zo=10ohm
www.DataSheet.net/
f Zout*
(MHz) (ohm)
135 3.50-j5.54
155 2.57-j2.57
175 2.06+j0.62
Zout*: Complex conjugate of
output impedance
@Pin=0.3W, Vdd=7.2V,
Idq=250mA(Vgg adj.)
Publication Date : Oct．2011
f=175MHz
f=155MHz
f Zin*
(MHz) (ohm)
135 5.58+j2.43
155 5.25+j5.60
175 5.01+j8.65
f=135MHz
11
Zin*: Complex conjugate of
input impedance
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet RD07MUS2B.PDF ] | |
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