|
|
PDF RD07MVS1B Data sheet ( Hoja de datos )
| Número de pieza | RD07MVS1B | |
| Descripción | Silicon MOSFET Power Transistor | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de RD07MVS1B (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
< Silicon RF Power MOS FET (Discrete) >
RD07MVS1B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
DESCRIPTION
OUTLINE DRAWING
RD07MVS1B is a MOS FET type transistor
specifically designed for VHF/UHF RF power
6.0+/-0.15
amplifiers applications.
RD07MVS1B improved a drain surge than
RD07MVS1 by optimizing MOSFET structure.
FEATURES
High power gain:
Pout>7W, Gp>10dB
@Vdd=7.2V,f=520MHz
High Efficiency: 60%typ. (175MHz)
High Efficiency: 55%typ. (520MHz)
INDEX MARK
(Gate)
www.DataSheet.net/
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
2
(0.25)
3
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
(0.25)
APPLICATION
For output stage of high power amplifiers in
VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD07MVS1B-101, T112 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct．2011
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
< Silicon RF Power MOS FET (Discrete) >
RD07MVS1B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TEST CIRCUIT(f=175MHz)
Vgg
C1
19mm
4.7K ohm
5mm
RF-in
19.5m
m
62pF
24.5mm
140pF
6.5mm
100pF
11.5m
m
680 ohm
180pF
15mm
Vdd
C2
10μF,50V
RD07MVS1B
175MHz
3.5mm
3mm
22pF
11.5mm
22pF
L
6.5mm
16pF
28.5mm
56pF
10mm
5mm
62pF RF-OUT
L:Enameled wire 7 Turns,D:0.43mm,2.46mmm O.D
C1,C2:1000pF,0.0022μF in parallel
Note:Board material PTFE substrate
Micro strip line width=2.2mm/50 ohm,er:2.7,t=0.8mm
W:line width=1.0mm
TEST CIRCUIT(f=520MHz)
www.DataSheet.net/
Vgg
C1
19mm
4.7K ohm
RF-in
46mm
68pF
9mm
37pF
19mm
Vdd
C2
10μF,50V
3.5mm
10pF
RD07MVS1B
520MHz
3.5mm
3.5mm
20pF
6.5mm
20pF
6.5mm
6pF
L
44.5mm
RF-OUT
18pF 62pF
L:Enameled wire 5 Turns,D:0.43mm,2.46mmm O.D
C1,C2:1000pF,0.0022μF in parallel
Note:Board material PTFE substrate
Micro strip line width=2.2mm/50 ohm,er:2.7,t=0.8mm
W:line width=1.0mm
Publication Date : Oct．2011
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RD07MVS1B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RD07MVS1 | Silicon MOSFET Power Transistor |  Mitsubishi Electric |
| RD07MVS1B | Silicon MOSFET Power Transistor | Mitsubishi Electric Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |