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Número de pieza | RD15HVF1 | |
Descripción | Silicon MOSFET Power Transistor | |
Fabricantes | Mitsubishi Electric Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RD15HVF1 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! < Silicon RF Power MOS FET (Discrete) >
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
DESCRIPTION
RD15HVF1 is a MOS FET type transistor specifically
designed for VHF/UHF High power amplifiers applica
-tions.
OUTLINE DRAWING
9.1+/-0.7
3.6+/-0.2
2
1.3+/-0.4
FEATURES
High power and High Gain:
Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz
Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz
High Efficiency: 60%typ. on VHF Band
High Efficiency: 55%typ. on UHF Band
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
1.2+/-0.4
0.8+0.10/-0.15
123
2.5 2.5
0.5+0.10/-0.15
5deg
PINS
1:GAT E
9.5MAX
2:SOURCE
note: 3:DRAIN
Torelance of no designation means typical value.
D imension in mm .www.DataSheet.net/
RoHS COMPLIANT
RD15HVF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the lot
marking.
This product include the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct.2011
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page < Silicon RF Power MOS FET (Discrete) >
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
TYPICAL CHARACTERISTICS
Vgs-Ids CHARACTERISTICS 2
10
Vds=10V
-25°C
8 Tc=-25~+75°C
+25°C
6
+75°C
4
2
0
0 2 4 6 8 10
Vgs(V)
TEST CIRCUIT(f=175MHz)
Vgg
Vdd
C1
8.2kOHM
9.1kOHM
100OHM
L3
www.DataSheet.net/
RF-IN
56pF
56pF
L1 175MHz
RD15HVF1
L2
25pF
25pF
C3
C2
82pF
RF-OUT
25pF 25pF 25pF 7
22
45
62
73
92
100
10pF 25pF 25pF
7
12
40
42
74
95
100
C1:2200pF 10uF in parallel
C2:2200pF*2 in parallel
C3:2200pF,330uF in parallel
Note:Board material PTFE substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
Dimensions:mm
L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
Publication Date : Oct.2011
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet RD15HVF1.PDF ] |
Número de pieza | Descripción | Fabricantes |
RD15HVF1 | Silicon MOSFET Power Transistor | Mitsubishi Electric Semiconductor |
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