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부품번호 | 2N6042 기능 |
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기능 | COMPLEMENTARY SILICON POWER TRANSISTORS | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 6 페이지수
PNP - 2N6040, 2N6042,
NPN - 2N6043, 2N6045
Plastic Medium-Power
Complementary Silicon
Transistors
Plastic medium−power complementary silicon transistors are
designed for general−purpose amplifier and low−speed switching
applications.
Features
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 100 mAdc −
VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043
= 100 Vdc (Min) − 2N6042, 2N6045
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44
= 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
2N6040 VCEO 60 Vdc
2N6043
2N6042
2N6045
100
Collector−Base Voltage
2N6040
2N6043
2N6042
2N6045
VCB
60 Vdc
100
Emitter−Base Voltage
Collector Current
Continuous
Peak
VEB
IC
5.0 Vdc
8.0 Adc
16
Base Current
Total Power Dissipation @ TC = 25°C
Derate above 25°C
IB 120 mAdc
PD 75 W
0.60 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg –65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
DARLINGTON, 8 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 − 100 VOLTS, 75 WATTS
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
2N604xG
AYWW
2N604x = Device Code
x = 0, 2, 3, or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 10
1
Publication Order Number:
2N6040/D
PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045
20
10
5.0
500 ms
2.0
TJ = 150°C
1.0 ms
5.0 ms
dc
1.0 BONDING WIRE LIMITED
0.5 THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
0.2 SECOND BREAKDOWN LIMITED
0.1 CURVES APPLY BELOW RATED VCEO
2N6040, 2N6043
0.05 2N6045
100 ms
0.02
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active−Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150°C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
10,000
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0
2.0
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
PNP
NPN
5.0 10 20 50 100 200
f, FREQUENCY (kHz)
500 1000
Figure 6. Small−Signal Current Gain
300
TJ = 25°C
200
Cob
100
70 Cib
50
30
0.1 0.2
PNP
NPN
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
100
50
PNP
2N6040, 2N6042
NPN
2N6043, 2N6045
20,000
10,000
7000
5000
3000
2000
TJ = 150°C
25°C
1000
700
500 - 55°C
VCE = 4.0 V
20,000
10,000
7000
5000
3000
2000
1000
700
500
TJ = 150°C
25°C
- 55°C
VCE = 4.0 V
300
200
0.1
300
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
200
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
5.0 7.0 10
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부품번호 | 상세설명 및 기능 | 제조사 |
2N6040 | POWER TRANSISTORS(10A/80W) | Mospec Semiconductor |
2N6040 | COMPLEMENTARY SILICON POWER TRANSISTORS | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |