|
|
|
부품번호 | 2N6044 기능 |
|
|
기능 | COMPLEMENTARY SILICON POWER TRANSISTORS | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 6 페이지수
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6040/D
Plastic Medium-Power
Complementary Silicon
Transistors
. . . designed for general–purpose amplifier and low–speed switching applications.
• High DC Current Gain —
hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector–Emitter Sustaining Voltage — @ 100 mAdc —
VCEO(sus) = 60 Vdc (Min) — 2N6040, 2N6043
VCEO(sus) = 80 Vdc (Min) — 2N6041, 2N6044
VCEO(sus) = 100 Vdc (Min) — 2N6042, 2N6045
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc — 2N6040,41, 2N6043,44
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc — 2N6042, 2N6045
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
2N6040 2N6041 2N6042
Symbol 2N6043 2N6044 2N6045
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
VCEO
VCB
VEB
IC
60
60
80 100
80 100
5.0
8.0
16
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
IB
PD
120
75
0.60
Operating and Storage Junction,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg
– 65 to + 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) IndicatesJEDECRegisteredData.
θJC
θJA
1.67
57
Unit
Vdc
Vdc
Vdc
Adc
mAdc
Watts
W/_C
_C
Unit
_C/W
_C/W
TA TC
4.0 80
PNP
2N6040
thru
2N6042*
NPN
2N6043
thru
2N6045*
*Motorola Preferred Device
DARLINGTON
8 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 – 80 – 100 VOLTS
75 WATTS
CASE 221A–06
TO–220AB
3.0 60
2.0 40
1.0 20
TC
TA
00
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la97r Power Transistor Device Data
1
2N6040 thru 2N6042 2N6043 thru 2N6045
PNP
2N6040, 2N6041, 2N6042
NPN
2N6043, 2N6044, 2N6045
20,000
10,000
7000
5000
3000
2000
TJ = 150°C
25°C
1000
700
500 – 55°C
VCE = 4.0 V
20,000
10,000
7000
5000
3000
2000
1000
700
500
TJ = 150°C
25°C
– 55°C
VCE = 4.0 V
300
200
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
300
200
0.1
Figure 8. DC Current Gain
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
3.0
TJ = 25°C
2.6
IC = 2.0 A 4.0 A
6.0 A
2.2
3.0
2.6
IC = 2.0 A 4.0 A
2.2
6.0 A
TJ = 25°C
1.8 1.8
1.4 1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
1.0
0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
20 30
3.0
TJ = 25°C
2.5
3.0
TJ = 25°C
2.5
2.0 2.0
1.5 VBE @ VCE = 4.0 V
1.0 VBE(sat) @ IC/IB = 250
0.5
0.1
VCE(sat) @ IC/IB = 250
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
1.5 VBE(sat) @ IC/IB = 250
VBE @ VCE = 4.0 V
1.0
VCE(sat) @ IC/IB = 250
5.0 7.0 10
0.5
0.1
Figure 10. “On” Voltages
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
4 Motorola Bipolar Power Transistor Device Data
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ 2N6044.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
2N6040 | POWER TRANSISTORS(10A/80W) | Mospec Semiconductor |
2N6040 | COMPLEMENTARY SILICON POWER TRANSISTORS | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |