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PDF 2N6052 Data sheet ( Hoja de datos )
| Número de pieza | 2N6052 | |
| Descripción | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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ON Semiconductort
Darlington Complementary
Silicon Power Transistors
PNP
2N6052*
. . . designed for general−purpose amplifier and low frequency
switching applications.
• High DC Current Gain —
hFE = 3500 (Typ) @ IC = 5.0 Adc
• Collector−Emitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 80 Vdc (Min) — 2N6058
100 Vdc (Min) — 2N6052, 2N6059
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
w These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol
2N6058
2N6052
2N6059
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
VCEO
VCB
VEB
IC
80 100
80 100
5.0
12
20
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
Total Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
IB 0.2
PD 150
0.857
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 200_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) Indicates JEDEC Registered Data.
RθJC
1.17
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
160
NPN
2N6058
2N6059*
*ON Semiconductor Preferred Device
DARLINGTON
12 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 −100 VOLTS
150 WATTS
CASE 1−07
TO−204AA
(TO−3)
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150
FTigC,uCrAeS1E.TPEMoPwEeRrATDUeRrEa(t°iCn)g
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1
175
200
Publication Order Number:
2N6052/D
1 page  
2N6052
PNP
2N6052
20,000
10,000
5000
TJ = 150°C
3000 25°C
2000
1000 −55 °C
VCE = 3.0 V
NPN
2N6058, 2N6059
40,000
20,000
TJ = 150°C
10,000
6,000
4,000
25°C
2,000
VCE = 3.0 V
500
300
200
0.2 0.3
0.5 1.0 2.0 3.0 5.0
IC, COLLECTOR CURRENT (AMP)
1,000
−55 °C
600
400
10 20
0.2 0.3 0.5 1.0 2.0 3.0 5.0
Figure 9. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
10
20
3.0
TJ = 25°C
2.6
IC = 3.0 A
2.2
6.0 A
9.0 A
3.0
TJ = 25°C
2.6 IC = 3.0 A
6.0 A
12 A
2.2
9.0 A 12 A
1.8 1.8
1.4 1.4
1.0
0.5 1.0 2.0 3.0 5.0 10 20 30 50
1.0
0.5 1.0 2.0 3.0 5.0
10 20 30 50
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
3.0
TJ = 25°C
2.5
3.0
TJ = 25°C
2.5
2.0 2.0
1.5 VBE(sat) @ IC/IB = 250
1.5 VBE(sat) @ IC/IB = 250
VBE @ VCE = 3.0 V
1.0
1.0
0.5
0.2 0.3
VCE(sat) @ IC/IB = 250
0.5 1.0 2.0 3.0
5.0 10
20
0.5
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages
VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 250
0.5 1.0 2.0 3.0 5.0
IC, COLLECTOR CURRENT (AMP)
10
20
http://onsemi.com
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2N6052.PDF ] | |
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