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PDF P7N80C Data sheet ( Hoja de datos )
| Número de pieza | P7N80C | |
| Descripción | FQP7N80C | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de P7N80C (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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FQP7N80C/FQPF7N80C
800V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 6.6A, 800V, RDS(on) = 1.9Ω @VGS = 10 V
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP Series
GD S
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TO-220F
FQPF Series
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP7N80C FQPF7N80C
800
6.6 6.6 *
4.2 4.2 *
26.4 26.4 *
± 30
580
6.6
16.7
4.5
167 56
1.33 0.44
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP7N80C
0.75
0.5
62.5
FQPF7N80C
2.25
--
62.5
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
Typical Characteristics (Continued)
100
D = 0.5
1 0 -1
0 .2
0 .1
0 .0 5
1 0 -2
0 .0 2
0 .0 1
sin g le p u lse
※ N otes :
1. Zθ
(t)
JC
=
0.75
℃ /W
M ax.
2. D uty Factor, D = t /t
12
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S qu a re W a ve P u lse D u ra tio n [se c]
101
Figure 11-1. Transient Thermal Response Curve for FQP7N80C
100 D = 0.5
0.2
0.1
1 0 -1
0.05
0.02
0.01
1 0 -2
sin gle pu lse
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※ N otes :
1. Z θ JC(t) = 2.25 ℃ /W M ax.
2 . D u ty F ac to r, D = t1/t2
3.
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S qu a re W a ve P u lse D u ra tio n [se c]
101
Figure 11-2. Transient Thermal Response Curve for FQPF7N80C
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet P7N80C.PDF ] | |
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