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BD647 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BD647
기능 (BD643 - BD651) SILICON DARLINGTON POWER TRANSISTORS
제조업체 Comset Semiconductors
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BD647 데이터시트, 핀배열, 회로
SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe.
They are intended for output stages in audio equipment, general amplifiers, and analogue
switching application.
PNP complements are BD644, BD646, BD648, BD650 and BD652
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-Base Voltage
www.DataSheet.net/
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
ICM Collector Peak Current
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
Value
60
80
100
120
140
45
60
80
100
120
5
8
12
Unit
V
V
V
A
A
17/10/2012
COMSET SEMICONDUCTORS
1|5
Datasheet pdf - http://www.DataSheet4U.co.kr/




BD647 pdf, 반도체, 판매, 대치품
SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
IC=4 A, VCE=3 V
BD643
BD645
VBE
Base-Emitter Voltage (*) IC=3 A, VCE=3 V
BD647
BD649
BD651
BD643
BD645
VCE=3.0 V, IC=0.5 A BD647
BD649
BD651
VCE=3.0 V, IC=4 A BD643
BD645
hFE
DC Current Gain (*)
VCE=3.0 V, IC=3 A
BD647
BD649
BD651
www.DataSheet.net/
BD643
BD645
VCE=3.0 V, IC=8 A BD647
BD649
BD651
VCE=3.0 V, IC=4 A
f=1MHz
BD643
hfe
Small Signal Current Gain VCE=3.0 V, IC=3 A
BD645
BD647
f=1MHz
BD649
BD651
(*) Pulse Width 300 µs, Duty Cycle 2.0%
Min Typ Max Unit
- - 2.5
- - 2.5 V
- 1900 -
750 -
-
750 - - -
- 1800 -
10 -
-
10 -
10 -
-
-
-
10 -
-
10 -
-
17/10/2012
COMSET SEMICONDUCTORS
4|5
Datasheet pdf - http://www.DataSheet4U.co.kr/

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