Datasheet BDT65 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BDT65	Silicon Darlington Power Transistors	NXP Semiconductors	transistor
2	BDT65	SILICON DARLINGTON POWER TRANSISTORS SEMICONDUCTORS BDT65-A-B-C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT	Comset Semiconductors	transistor
3	BDT65	Trans Darlington NPN 60V 12A 3-Pin(3+Tab) TO-220AB	New Jersey Semiconductor	data
4	BDT65A	SILICON DARLINGTON POWER TRANSISTORS SEMICONDUCTORS BDT65-A-B-C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT	Comset Semiconductors	transistor
5	BDT65A	Trans Darlington NPN 80V 12A 3-Pin(3+Tab) TO-220AB	New Jersey Semiconductor	data

BDT Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BDT41	Silicon Epitaxial Base Power Transistors	ETC	transistor
2	BDT60	PNP SILICON POWER DARLINGTONS	New Jersey Semi-Conductor	data
3	BDT60	Silicon PNP Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistors BDT60/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C ·C	Inchange Semiconductor	transistor
4	BDT60	PNP SILICON POWER DARLINGTONS BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C 50 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at	Power Innovations Limited	data
5	BDT60	PNP SILICON POWER DARLINGTONS	TRSYS	data
6	BDT60A	PNP SILICON POWER DARLINGTONS	New Jersey Semi-Conductor	data
7	BDT60A	Silicon PNP Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistors BDT60/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C ·C	Inchange Semiconductor	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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