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Datasheet BUV26F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BUV26F | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 90V(Min)- BUV26F 100V(Min)- BUV26AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high frequency and efficienc |  Inchange Semiconductor | transistor |
BUV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BUV10 | Silicon NPN Power Transistor www.DataSheet.co.kr
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUV10
DESCRIPTION ·High Switching Speed ·High Current Capability
APPLICATIONS ·Designed for high current,high speed,high power applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO Inchange Semiconductor transistor | | |
| 2 | BUV10N | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package BUV10N
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
1.47 (0.058) 1.60 (0.063)
29.9 (1.177) 30.4 (1.197)
16.64 (0.655) 17  Seme LAB data | | |
| 3 | BUV11 | 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BUV11/D
SWITCHMODE Series NPN Silicon Power Transistor
. . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A • Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 6 A • Ver  Motorola Inc transistor | | |
| 4 | BUV11 | SITCHMODE Series NPN Silicon Power Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BUV11/D
SWITCHMODE Series NPN Silicon Power Transistor
. . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A • Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 6 A • Ver  ON Semiconductor transistor | | |
| 5 | BUV12 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package BUV12
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
1.47 (0.058) 1.60 (0.063)
29.9 (1.177) 30.4 (1.197)
16.64 (0.655) 17. Seme LAB data | | |
| 6 | BUV18 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV18
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 0.6V(Max.) @IC= 40A ·High Switching Speed
APPLICATIONS ·High efficiency converters ·Motor drive control ·Switching regulator
Absolute maximum ra Inchange Semiconductor transistor | | |
| 7 | BUV18 | (BUV18 / BUV19) NPN High Current Switching Transistors w
w
w
.d
e e h s a t a
. u t4
m o c
 ST Microelectronics transistor | |
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