Datasheet.kr   

BUV27 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUV27
기능 NPN Silicon Power Transistor
제조업체 ON Semiconductor
로고 ON Semiconductor 로고 



전체 5 페이지

		

No Preview Available !

BUV27 데이터시트, 핀배열, 회로
BUV27
NPN Silicon Power
Transistor
This device is designed for use in switching regulators and motor
control.
Features
Low Collection Emitter Saturation Voltage
Fast Switching Speed
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Sustaining Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak (Note 1)
Base Current
Total Device Dissipation (TC = 25°C)
Derate above 25°C
VCEO
VCBO
VEBO
IC
ICM
IB
PD
120 Vdc
240 Vdc
7.0 Vdc
12 Adc
20 Adc
4.0 Adc
70 W
0.56 W/°C
Operating and Storage Temperature
TJ, Tstg − 65 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case RqJC
Junction−to−Ambient RqJA
1.78 °C/W
62.5
www.onsemi.com
POWER TRANSISTOR
12 AMPERES
120 VOLTS
70 WATTS
SCHEMATIC
COLLECTOR
2,4
1
BASE
3
EMITTER
MARKING
DIAGRAM
4
1
2
3
TO−220
CASE 221A
STYLE 1
BUV27G
AYWW
1
BUV27 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BUV27G
TO−220
(Pb−Free)
50 per Rail
*For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 5
1
Publication Order Number:
BUV27/D




BUV27 pdf, 반도체, 판매, 대치품
BUV27
1000
TA = 150°C
TA = 25°C
100 TA = −55°C
VCE = 2 V
10
0.1
1 10
IC, COLLECTOR CURRENT (A)
Figure 4. DC Current Gain vs. Collector
Current
100
1.3
IC/IB = 10
1.2
1.1
1
0.9 TA = −55°C
0.8 TA = 25°C
0.7
0.6 TA = 150°C
0.5
0.4
0.3
0.1 1 10 100
IC, COLLECTOR CURRENT (A)
Figure 6. Base−Emitter Saturation Voltage vs.
Collector Current
10k
Cibo
1k
Cobo
100
10
0.1
1 10
VR, REVERSE VOLTAGE (V)
Figure 8. Capacitance
100
1.3
1.2 VCE = 2 V
1.1
1
0.9 TA = −55°C
0.8
0.7 TA = 25°C
0.6
0.5 TA = 150°C
0.4
0.3
0.1 1 10 100
IC, COLLECTOR CURRENT (A)
Figure 5. Base−Emitter Turn−ON Voltage vs.
Collector Current
1
IC/IB = 10
TA = 150°C
0.1
TA = 25°C
0.01
0.1
TA = −55°C
1
10
100
IC, COLLECTOR CURRENT (A)
Figure 7. Collector−Emitter Saturation Voltage
vs. Collector Current
80
VCE = 1 V
70 TA = 25°C
60
50
40
30
20
10
0
0.1 1 10
IC, COLLECTOR CURRENT (A)
Figure 9. Current Gain Bandwidth Product vs.
Collector Current
www.onsemi.com
4

4페이지













구       성총 5 페이지
다운로드[ BUV27.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
BUV20

50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS

Motorola  Inc
Motorola Inc
BUV20

NPN Silicon Power Transistor

ON Semiconductor
ON Semiconductor

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵