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부품번호 | FCU5N60 기능 |
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기능 | 600V N-Channel MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 9 페이지수
FCD5N60 / FCU5N60
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C
• Typ. Rds(on)=0.81Ω
• Ultra low gate charge (typ. Qg=16nC)
• Low effective output capacitance (typ. Coss.eff=32pF)
• 100% avalanche tested
D
July 2006
SuperFETTM
Description
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
GS
D-PAK
FCD Series
GDS
I-PAK
FCU Series
G
Absolute Maximum Ratings
http://www.DataSheet4U.net/
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
FCD5N60 / FCU5N60
600
4.6
2.9
13.8
± 30
2.9
4.6
5.4
20
54
0.43
-55 to +150
300
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FCD5N60/FCU5N60
2.3
83
S
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FCD5N60/FCU5N60 Rev. A0
1
www.fairchildsemi.com
datasheet pdf - http://www.DataSheet4U.net/
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
* Notes :
1. VGS = 0 V
2. ID = 250µA
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. V = 10V
GS
2. ID = 2.3A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
102 Operation in This Area
is Limited by R DS(on)
101
100
10 µs
100 µs
1 ms
10 ms
DC100 ms
* Notes :
10-1 1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2
100
101 102
VDS, Drain-Source Voltage [V]
103
5
4
http://www.DataSheet4U.net/
3
2
1
0
25
50 75 100 125
TC, Case Temperature [oC]
Figure 11. Transient Thermal Response Curve
150
100
1 0 -1
D = 0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
1 0 -5
s in g le p u ls e
* N o te s :
1 . Z θJC (t) = 2 .3 oC /W M a x .
2 . D u ty F a c to r, D = t1/t2
3 . T JM - T C = P D M * Z θJC (t)
PDM
t1
t2
1 0 -4
1 0 -3
t1, S q u a re
W ave
1 0 -2
1 0 -1
P u ls e D u r a tio n
[s e c ]
100
101
FCD5N60/FCU5N60 Rev. A0
4
www.fairchildsemi.com
datasheet pdf - http://www.DataSheet4U.net/
4페이지 Mechanical Dimensions
D-PAK
http://www.DataSheet4U.net/
FCD5N60/FCU5N60 Rev. A0
Dimensions in Millimeters
7 www.fairchildsemi.com
datasheet pdf - http://www.DataSheet4U.net/
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부품번호 | 상세설명 및 기능 | 제조사 |
FCU5N60 | 600V N-Channel MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |