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PDF FCU900N60Z Data sheet ( Hoja de datos )
| Número de pieza | FCU900N60Z | |
| Descripción | 600V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FCU900N60Z
600V N-Channel MOSFET
Features
• 675V @TJ = 150oC
• Max. RDS(on) = 900mΩ
• Ultra Low Gate Charge (Typ. Qg = 13nC)
• Low Effective Output Capacitance (Typ. Coss.eff = 49pF)
• 100% Avalanche Tested
• ESD Improved Capacity
August 2012
SuperFET® II
Description
SuperFET®II is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and lower
gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET®II is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
I-PAK
http://www.DataSheet4U.net/
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-DC
-AC
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
G
S
(f>1Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Rating
600
±20
±30
4.5
2.8
13.5
47.5
1
0.52
20
100
52
0.42
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2012 Fairchild Semiconductor Corporation
FCU900N60Z Rev. C0
1
Rating
2.4
100
Units
oC/W
www.fairchildsemi.com
datasheet pdf - http://www.DataSheet4U.net/
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
3
0.5
1
0.2
0.1
0.05
0.02
0.01
Single pulse
0.1
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 2.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
Rectangular Pulse Duration [sec]
10-1
100
http://www.DataSheet4U.net/
FCU900N60Z Rev. C0
5 www.fairchildsemi.com
datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
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| PDF Descargar | [ Datasheet FCU900N60Z.PDF ] | |
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