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PDF 2N6384 Data sheet ( Hoja de datos )
| Número de pieza | 2N6384 | |
| Descripción | NPN DARLINGTON POWER SILICON TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
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TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/523
Devices
2N6383
2N6384
2N6385
Qualified Level
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N6383 2N6384 2N6385
Collector-Emitter Voltage
VCEO
40
60
80
Collector-Base Voltage
VCBO
40
60
80
Emitter-Base Voltage
VEBO
5.0
Base Current
IB 0.25
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
IC
PT
10
6.0
100
Operating & Storage Temperature
THERMAL CHARACTERISTICS
Top, Tstg
-55 to +175
Characteristics
Symbol
Max.
Thermal Resistance Junction-to-Case
RθJC
1) Derate linearly 34.2 mW/0C above TA > +250C
2) Derate linearly 571 mW/0C above TC > +250C
1.75
ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N6383
2N6384
2N6385
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, RBB = 100 Ω
2N6383
2N6384
2N6385
V(BR)CER
Collector-Base Cutoff Current
VCE = 40 Vdc
VCE = 60 Vdc
2N6383
2N6384
ICBO
VCE = 80 Vdc
2N6385
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
Unit
0C/W
Min.
40
60
80
40
60
80
TO-3* (TO-204AA)
*See Appendix A for
package outline
Max.
Unit
Vdc
Vdc
1.0
1.0 mAdc
1.0
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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| PDF Descargar | [ Datasheet 2N6384.PDF ] | |
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