|
|
|
부품번호 | 2N6388 기능 |
|
|
기능 | SILICON NPN POWER DARLINGTON TRANSISTOR | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 4 페이지수
® 2N6388
SILICON NPN POWER DARLINGTON TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN DARLINGTON
s HIGH CURRENT CAPABILITY
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
DESCRIPTION
The device is a silicon epitaxial-base NPN power
transistor in monolithic Darlington configuration
mounted in Jedec TO-220 plastic package.
It is inteded for use in low and medium frequency
power applications.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEV
VCER
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IB = 0)
Collector-Emitter Voltage (VBE = -1.5V)
Collector-Emitter Voltage (RBE ≤ 100Ω)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at Tc ≤ 25 oC
Storage Temperature
Max. Operating Junction Temperature
April 1999
R1 Typ. = 10 KΩ
R2 Typ. = 160 Ω
Value
80
80
80
80
5
10
15
0.25
65
-65 to 150
150
Unit
V
V
V
V
V
A
A
A
W
oC
oC
1/4
2N6388
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
http://www.st.com
.
4/4
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ 2N6388.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
2N6380 | Trans GP BJT PNP 80V 50A 3-Pin TO-63 | New Jersey Semiconductor |
2N6381 | Trans GP BJT PNP 100V 50A 3-Pin TO-63 | New Jersey Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |