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부품번호 | 2N6388 기능 |
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기능 | DARLINGTON NPN SILICON POWER TRANSISTORS | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 6 페이지수
www.DataSheet4U.com
2N6387, 2N6388
2N6388 is a Preferred Device
Plastic Medium−Power
Silicon Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) − 2N6387
= 80 Vdc (Min) − 2N6388
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC
= 5.0 Adc − 2N6387, 2N6388
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• TO−220AB Compact Package
• Pb−Free Packages are Available*
http://onsemi.com
DARLINGTON NPN SILICON
POWER TRANSISTORS
8 AND 10 AMPERES
65 WATTS, 60 − 80 VOLTS
MARKING
DIAGRAM
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage
Symbol
2N6387 VCEO
2N6388
Value
60
80
Unit
Vdc
Collector−Base Voltage
2N6387 VCB
2N6388
60 Vdc
80
Emitter−Base Voltage
Collector Current − Continuous
− Peak
VEB 5.0 Vdc
IC 10 Adc
15
Base Current
Total Power Dissipation @ TC = 25_C
Derate above 25_C
IB 250 mAdc
PD 65 W
0.52 W/°C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
Operating and Storage Junction,
Temperature Range
PD 2.0 W
0.016 W/°C
TJ, Tstg −65 to +150 °C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.92 _C/W
Thermal Resistance, Junction−to−Ambient RqJA
62.5 _C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
1
2
3
4
TO−220AB
CASE 221A
STYLE 1
2N638xG
AYWW
2N638x = Device Code
x = 7 or 8
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
2N6387
2N6387G
2N6388
2N6388G
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 12
1
Publication Order Number:
2N6387/D
2N6387, 2N6388
20
10 10 ms
5.0 dc
50 ms
2.0
50 ms
1 ms
1.0
0.5 TJ = 150°C
5 ms
0.2
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 100°C
0.1 SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO 2N6387
2N6388
0.03
1.0 2.0 4.0 6.0 10 20 40
60
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Active-Region Safe Operating Area
80
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure
4. At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown
10,000
5000
3000
2000
1000
500
300 TC = 25°C
200 VCE = 4.0 Vdc
100 IC = 3.0 Adc
50
30
20
10
1.0 2.0
5.0 10 20 50 100 200
f, FREQUENCY (kHz)
500 1000
Figure 6. Small−Signal Current Gain
300
TJ = 25°C
200
Cob
100
70 Cib
50
30
0.1 0.2
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
50 100
20,000
10,000
VCE = 4.0 V
5000 TJ = 150°C
3000
2000
25°C
1000
−55 °C
500
300
200
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
5.0 7.0 10
3.0
2.6
IC = 2.0 A
4.0 A
6.0 A
2.2
TJ = 25°C
1.8
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
20 30
Figure 9. Collector Saturation Region
http://onsemi.com
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |