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부품번호 | 2N6404 기능 |
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기능 | Silicon Controlled Rectifiers | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 7 페이지수
2N6400 Series
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half−wave silicon gate−controlled, solid−state devices are needed.
Features
• Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 V
• These are Pb−Free Devices
MAXIMUM RATINGS* (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = *40 to 125°C, Sine Wave 50 to 60
Hz; Gate Open)
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
VDRM,
VRRM
50
100
200
400
600
800
V
On-State Current RMS (180° Conduction
Angles; TC = 100°C)
Average On-State Current (180° Conduc-
tion Angles; TC = 100°C)
Peak Non-repetitive Surge Current (1/2
Cycle, Sine Wave 60 Hz, TJ = 25°C)
Circuit Fusing Considerations (t = 8.3 ms)
IT(RMS)
IT(AV)
ITSM
I2t
16
10
160
145
A
A
A
A2s
Forward Peak Gate Power (Pulse Width ≤
1.0 ms, TC = 100°C)
Forward Average Gate Power (t = 8.3 ms,
TC = 100°C)
Forward Peak Gate Current (Pulse Width ≤
1.0 ms, TC = 100°C)
Operating Junction Temperature Range
PGM
PG(AV)
IGM
TJ
20
0.5
2.0
−40 to
+125
W
W
A
°C
Storage Temperature Range
Tstg −40 to °C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
SCRs
16 AMPERES RMS
50 thru 800 VOLTS
G
AK
MARKING
DIAGRAM
4
TO−220AB
CASE 221A
STYLE 3
2N640xG
AYWW
1
2
3
x = 0, 1, 2, 3, 4 or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 6
1
Publication Order Number:
2N6400/D
2N6400 Series
200
100
70
50
30
20
TJ = 25°C
10
125°C
7.0
5.0
3.0
2.0
160
1 CYCLE
150
1.0 140
0.7
0.5
0.3
0.2
0.4
0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 3. On−State Characteristics
130
TJ = 125°C
f = 60 Hz
120
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
110
4.4 1.0
2.0 3.0 4.0
NUMBER OF CYCLES
6.0 8.0 10
Figure 4. Maximum Non−Repetitive Surge Current
1.0
0.7
0.5
0.3
0.2
ZqJC(t) = RqJC • r(t)
0.1
0.07
0.05
0.03
0.02
0.01
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
20 30 50
t, TIME (ms)
100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k
Figure 5. Thermal Response
http://onsemi.com
4
4페이지 BF
Q
H
Z
4
123
A
K
L
V
G
N
D
2N6400 Series
PACKAGE DIMENSIONS
TO−220
CASE 221A−07
ISSUE O
−T−
SEATING
PLANE
T
C
S
U
R
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.014 0.022
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 ---
Z --- 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.36 0.55
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 ---
--- 2.04
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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PUBLICATION ORDERING INFORMATION
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7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
2N6400/D
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부품번호 | 상세설명 및 기능 | 제조사 |
2N6400 | Silicon Controlled Rectifiers | ON Semiconductor |
2N6400 | (2N6400 - 2N6405) Silicon Controlled Rectifiers | Motorola Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |