2N6405 Datasheet PDF - ON Semiconductor
| Part Number | 2N6405 | |
| Description | Silicon Controlled Rectifiers | |
| Manufacturers | ON Semiconductor | |
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2N6400 Series
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half−wave silicon gate−controlled, solid−state devices are needed.
Features
• Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 V
• These are Pb−Free Devices
MAXIMUM RATINGS* (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = *40 to 125°C, Sine Wave 50 to 60
Hz; Gate Open)
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
VDRM,
VRRM
50
100
200
400
600
800
V
On-State Current RMS (180° Conduction
Angles; TC = 100°C)
Average On-State Current (180° Conduc-
tion Angles; TC = 100°C)
Peak Non-repetitive Surge Current (1/2
Cycle, Sine Wave 60 Hz, TJ = 25°C)
Circuit Fusing Considerations (t = 8.3 ms)
IT(RMS)
IT(AV)
ITSM
I2t
16
10
160
145
A
A
A
A2s
Forward Peak Gate Power (Pulse Width ≤
1.0 ms, TC = 100°C)
Forward Average Gate Power (t = 8.3 ms,
TC = 100°C)
Forward Peak Gate Current (Pulse Width ≤
1.0 ms, TC = 100°C)
Operating Junction Temperature Range
PGM
PG(AV)
IGM
TJ
20
0.5
2.0
−40 to
+125
W
W
A
°C
Storage Temperature Range
Tstg −40 to °C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
SCRs
16 AMPERES RMS
50 thru 800 VOLTS
G
AK
MARKING
DIAGRAM
4
TO−220AB
CASE 221A
STYLE 3
2N640xG
AYWW
1
2
3
x = 0, 1, 2, 3, 4 or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 6
1
Publication Order Number:
2N6400/D
|
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2N6400 Series
TYPICAL CHARACTERISTICS
100 100
70 OFF‐STATE VOLTAGE = 12 V
50 RL = 50 W
30
20 TJ = -40°C
10
7.0
5.0
3.0
2.0
1.0
0.2
25°C
125°C
0.5 1.0 2.0 5.0 10 20
PULSE WIDTH (ms)
50 100
Figure 6. Typical Gate Trigger Current
versus Pulse Width
200
10
1
-40 -25 -10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Gate Trigger Current
versus Junction Temperature
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40 -25 -10 5 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110 125
Figure 8. Typical Gate Trigger Voltage
versus Junction Temperature
100
10
1
-40 -25 -10 5 20 35 50 65 80 95
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Typical Holding Current
versus Junction Temperature
110 125
http://onsemi.com
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| Information | Total 7 Pages | |
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