BUK9Y3R0-40E Datasheet PDF - NXP Semiconductors
| Part Number | BUK9Y3R0-40E | |
| Description | N-channel logic level MOSFET | |
| Manufacturers | NXP Semiconductors | |
| Logo |  |
|
|
There is a preview and BUK9Y3R0-40E download ( pdf file ) link at the bottom of this page. Total 13 Pages | ||
Preview 1 page No Preview Available !
BUK9Y3R0-40E
N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56
12 February 2013
Product data sheet
1. General description
Logic level N-channel MOSFET in LFPAK56 (Power SO8) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
• Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
• 12 V Automotive systems
• Motors, lighting and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching
http://www.DataSheet4U.net/
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 1
[1]
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11
resistance
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 25 A; VDS = 32 V;
Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 40 V
- - 100 A
- - 194 W
-
2.47 3
mΩ
- 10.7 - nC
Scan or click this QR code to view the latest information for this product
datasheet pdf - http://www.DataSheet4U.net/
|
| |
 
NXP Semiconductors
BUK9Y3R0-40E
N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10-1 0.1
0.05
0.02
10-2
single shot
003aaj068
P
tp
δ= T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp
T
tp (s)
t
1
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
I = 250 µA; V = 0 V; T = 25 °CD
GS
http://www.DataSheet4U.net/
j
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 9; Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 9
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 9
IDSS drain leakage current VDS = 40 V; VGS = 0 V; Tj = 25 °C
VDS = 40 V; VGS = 0 V; Tj = 175 °C
IGSS gate leakage current VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
VGS = 5 V; ID = 25 A; Tj = 175 °C;
Fig. 12; Fig. 11
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
ID = 25 A; VDS = 32 V; VGS = 5 V;
Fig. 13; Fig. 14
BUK9Y3R0-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 February 2013
Min Typ Max Unit
40 - - V
36 - - V
1.4 1.7 2.1 V
- - 2.45 V
0.5 - - V
-
0.13 10
µA
- - 500 µA
- 2 100 nA
- 2 100 nA
-
2.47 3
mΩ
- 1.98 2.5 mΩ
- - 6 mΩ
- 35.5 - nC
- 11.7 - nC
© NXP B.V. 2013. All rights reserved
5 / 13
datasheet pdf - http://www.DataSheet4U.net/
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BUK9Y3R0-40E electronic component. |
| Information | Total 13 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BUK9Y3R0-40E.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| BUK9Y3R0-40E | The function is N-channel logic level MOSFET. NXP Semiconductors | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
BUK9
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||