PDF ETH3006-1-M3 Data sheet ( Hoja de datos )

Número de pieza	ETH3006-1-M3
Descripción	Hyperfast Rectifier
Fabricantes	Vishay
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No Preview Available ! New Product VS-ETH3006S-M3, VS-ETH3006-1-M3 Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® VS-ETH3006S-M3 Base cathode 2 VS-ETH3006-1-M3 2 FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current • Compliant to RoHS Directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition • Designed and qualified according to JEDEC-JESD47 1 N/C 3 Anode D2PAK 13 N/C Anode TO-262 PRODUCT SUMMARY Package TO-263AB (D2PAK), TO-262AA IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation 30 A 600 V 2.65 V 27 ns 175 °C Single die DESCRIPTION/APPLICATIONS Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC Boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over http://www.DataSheet4U.net/ dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) Non-repetitive peak surge current Operating junction and storage temperatures IFSM TJ, TStg TEST CONDITIONS TC = 95 °C TC = 25 °C MAX. 600 30 180 - 65 to 175 UNITS V A °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. Breakdown voltage, blocking voltage Forward voltage VBR, VR VF IR = 100 μA IF = 30 A IF = 30 A, TJ = 150 °C 600 - - Reverse leakage current VR = VR rated IR TJ = 150 °C, VR = VR rated - - Junction capacitance CT VR = 600 V - Series inductance LS Measured lead to lead 5 mm from package body - TYP. - 2.0 1.4 0.02 50 20 8.0 MAX. - 2.65 1.8 30 300 - - UNITS V μA pF nH Document Number: 93574 For technical questions within your region, please contact one of the following: Revision: 21-Apr-11 [email protected], [email protected], [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 datasheet pdf - http://www.DataSheet4U.net/ 1 page New Product VS-ETH3006S-M3, VS-ETH3006-1-M3 Hyperfast Rectifier, 30 A FRED Pt® Vishay Semiconductors VR = 200 V L = 70 μH 0.01 Ω D.U.T. dIF/dt adjust G D IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit IF 0 (3) trr ta tb (2) IRRM (4) Qrr 0.5 IRRM dI(rec)M/dt (5) (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. http://www.DataSheet4U.net/ 0.75 IRRM (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93574 For technical questions within your region, please contact one of the following: Revision: 21-Apr-11 [email protected], [email protected], [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 datasheet pdf - http://www.DataSheet4U.net/ 5 Page

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