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TK12A60D 데이터시트 PDF




Toshiba Semiconductor에서 제조한 전자 부품 TK12A60D은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 TK12A60D 기능
기능 Field Effect Transistor
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TK12A60D 데이터시트, 핀배열, 회로
TK12A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK12A60D
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.45 (typ.)
High forward transfer admittance: Yfs= 7.5 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
±30
12
48
45
359
12
4.5
150
http://www.DataSheet4U.net/
55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
Ф3.2 ± 0.2 10 ± 0.3
A
Unit: mm
2.7 ± 0.2
1.14 ± 0.15
0.69 ± 0.15
Ф0.2 M A
2.54 2.54
123
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
2.78
62.5
Unit
°C/W
°C/W
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.36 mH, RG = 25 Ω, IAR = 12 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
1 2010-08-12
datasheet pdf - http://www.DataSheet4U.net/




TK12A60D pdf, 반도체, 판매, 대치품
RDS (ON) Tc
2
Common source
VGS = 10 V
Pulse Test
1.6
1.2
12
6
0.8
ID = 3 A
0.4
0
80
40 0 40 80 120
Case temperature Tc (°C)
160
TK12A60D
100 Common source
Tc = 25°C
Pulse Test
IDR VDS
10
1
0.1
0
10
5
3
1
VGS = 0 V
-0.3 -0.6 -0.9 -1.2
Drain-source voltage VDS (V)
-1.5
10000
1000
100
Capacitance – VDS
Ciss
Coss
10
Common source
VGS = 0 V
f =1MHz
Tc = 25°C
1
0.1
1
Crss
10 100
Drain-source voltage VDS (V)
Vth Tc
5 Common source
VDS = 10 V
ID = 1mA
4 Pulse Test
3
2
http://www.DataSheet4U.net/
1
0
80
40 0
40 80 120
Case temperature Tc (°C)
160
80
60
40
20
0
0
PD Tc
40 80 120
Case temperature Tc (°C)
160
Dynamic input / output
characteristics
500 20
400
300
200
100
0
0
VDS
200V
VDD = 100 V
400V
16
12
VGS
Common source
ID = 12 A
Tc = 25°C
Pulse Test
8
4
10 20 30 40 50
Total gate charge Qg (nC)
0
60
4 2010-08-12
datasheet pdf - http://www.DataSheet4U.net/

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