Datasheet.kr   

IRF1010NLPBF 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRF1010NLPBF은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 IRF1010NLPBF 자료 제공

부품번호 IRF1010NLPBF 기능
기능 Power MOSFET ( Transistor )
제조업체 International Rectifier
로고 International Rectifier 로고


IRF1010NLPBF 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 11 페이지수

미리보기를 사용할 수 없습니다

IRF1010NLPBF 데이터시트, 핀배열, 회로
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
G
Description
Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
http://www.DataSheet4U.net/
The through-hole version (IRF1010NL) is available for low-
AprbofsileoalupptleicaMtioanxs.imum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V ˆ
Continuous Drain Current, VGS @ 10V ˆ
Pulsed Drain Current ˆ
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒˆ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
www.irf.com
PD - 95103
IRF1010NSPbF
IRF1010NLPbF
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 11m
ID = 85A‡
S
D 2 Pak
TO-262
IRF1010NSPbF IRF1010NLPbF
Max.
85‡
60
290
180
1.2
± 20
43
18
3.6
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
0.85
40
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Units
°C/W
1
03/11/04
datasheet pdf - http://www.DataSheet4U.net/




IRF1010NLPBF pdf, 반도체, 판매, 대치품
IRF1010NS/LPbF
6000
5000
4000
3000
2000
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
20 ID = 43A
16
12
8
VVVDDDSSS
=
=
=
44V
27V
11V
1000
Crss
0
1
10 100
VDS, Drain-to-Source Voltage (V)
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 20 40 60 80 100 120
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
http://www.DataSheet4U.net/
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175° C
10
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1 TJ = 25° C
0.1
0.0
VGS = 0 V
0.6 1.2 1.8
VSD ,Source-to-Drain Voltage (V)
2.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10 1msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
1 10
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
www.irf.com
datasheet pdf - http://www.DataSheet4U.net/

4페이지










IRF1010NLPBF 전자부품, 판매, 대치품
IRF1010NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
‚
-
+ Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
- „+

RG
VGS
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
- VDD
* Reverse Polarity of D.U.T for P-Channel
http://www.DataSheet4U.net/
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
[VDD]
[ISD]
www.irf.com
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
7
datasheet pdf - http://www.DataSheet4U.net/

7페이지


구       성 총 11 페이지수
다운로드[ IRF1010NLPBF.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
IRF1010NLPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵