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부품번호 | IRF1010NLPBF 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 11 페이지수
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
G
Description
Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
http://www.DataSheet4U.net/
The through-hole version (IRF1010NL) is available for low-
AprbofsileoalupptleicaMtioanxs.imum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
www.irf.com
PD - 95103
IRF1010NSPbF
IRF1010NLPbF
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 11mΩ
ID = 85A
S
D 2 Pak
TO-262
IRF1010NSPbF IRF1010NLPbF
Max.
85
60
290
180
1.2
± 20
43
18
3.6
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
0.85
40
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Units
°C/W
1
03/11/04
datasheet pdf - http://www.DataSheet4U.net/
IRF1010NS/LPbF
6000
5000
4000
3000
2000
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
20 ID = 43A
16
12
8
VVVDDDSSS
=
=
=
44V
27V
11V
1000
Crss
0
1
10 100
VDS, Drain-to-Source Voltage (V)
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 20 40 60 80 100 120
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
http://www.DataSheet4U.net/
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175° C
10
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1 TJ = 25° C
0.1
0.0
VGS = 0 V
0.6 1.2 1.8
VSD ,Source-to-Drain Voltage (V)
2.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10 1msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
1 10
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
www.irf.com
datasheet pdf - http://www.DataSheet4U.net/
4페이지 IRF1010NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
-
+ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
- +
RG
VGS
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
- VDD
* Reverse Polarity of D.U.T for P-Channel
http://www.DataSheet4U.net/
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
[VDD]
[ISD]
www.irf.com
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
7
datasheet pdf - http://www.DataSheet4U.net/
7페이지 | |||
구 성 | 총 11 페이지수 | ||
다운로드 | [ IRF1010NLPBF.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
IRF1010NLPBF | Power MOSFET ( Transistor ) | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |