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JS28F512M29EWLx 데이터시트 PDF




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기능 3 V supply flash memory
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JS28F512M29EWLx 데이터시트, 핀배열, 회로
Numonyx™ Axcell™ M29EW
Datasheet
256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit (x8/x16, uniform block)
3 V supply flash memory
Features
„ Supply voltage
— VCC = 2.7 to 3.6 V for Program, Erase and
Read
— VCCQ = 1.65 to 3.6 V for I/O buffers
„ Asynchronous Random/Page Read
— Page size: 16 words or 32 bytes
— Page access: 25 ns
— Random access: 100ns (Fortified BGA);
110 ns (TSOP)
„ Buffer Program
— 512-word program buffer
„ Programming time
— 0.88 µs per byte (1.14MB/s) typical when
using full buffer size in buffer program
„ Memory organization
— Uniform blocks, 128 Kbytes/64 Kwords
each
„ Program/Erase controller
— Embedded byte/word program algorithms
„ Program/ Erase Suspend and Resume
— Read from any block during Program
Suspend
— Read and Program another block during
Erase Suspend
„ Blank Check to verify an erased block
„ Unlock Bypass/Block Erase/Chip Erase/Write
to Buffer
— Faster Buffered/Batch Programming
— Faster Block and Chip Erase
„ Vpp/WP# pin protection
— Protects first or last block regardless of
block protection settings
„ Software protection
— Volatile Protection
— Non-Volatile Protection
— Password Protection
— Password Access
„ Extended Memory block
— 128-word/256-byte block for permanent,
secure identification.
— can be programmed and locked by factory
http://www.DataSheet4U.net/
or by the customer
„ Low power consumption
— Standby
„ Minimum 100,000 Program/Erase cycles per
block
„ ETOXTM* X (65nm) MLC technology
„ Fortified BGA and TSOP packages
„ JESD47E Compliant
„ Green packages available
— RoHS Compliant
— Halogen Free
April 2011
208045-11
1
datasheet pdf - http://www.DataSheet4U.net/




JS28F512M29EWLx pdf, 반도체, 판매, 대치품
Table of Contents
Numonyx™ Axcell™ M29EW
7 Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
7.1 Lock Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
7.1.1 Password Protection Mode Lock bit (DQ2) . . . . . . . . . . . . . . . . . . . . . . 52
7.1.2 Non-Volatile Protection Mode Lock bit (DQ1) . . . . . . . . . . . . . . . . . . . . . 52
7.1.3 Extended Memory Block Protection bit (DQ0) . . . . . . . . . . . . . . . . . . . . 52
7.2 Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
7.2.1 Data Polling bit (DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
7.2.2 Toggle bit (DQ6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
7.2.3 Error bit (DQ5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
7.2.4 Erase Timer bit (DQ3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
7.2.5 Alternative Toggle bit (DQ2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
7.2.6 Buffered Program Abort bit (DQ1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
8 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
9 DC and AC Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
10 Programming and Erase Performance . . . . . . . . . . . . . . . . . . . . . . . . . 77
11 Package Mechanical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
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12 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Appendix A Memory Address Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Appendix B Common Flash Interface (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
Appendix C Extended Memory Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
C.1 Numonyx pre-locked Extended Memory Block . . . . . . . . . . . . . . . . . . . . 116
C.2 Customer-lockable Extended Memory Block . . . . . . . . . . . . . . . . . . . . . . 117
Appendix D Revision History. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
4 208045-11
datasheet pdf - http://www.DataSheet4U.net/

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JS28F512M29EWLx 전자부품, 판매, 대치품
Numonyx™ Axcell™ M29EW
1 Description
Description
The Numonyx™ Axcell™ M29EW flash memory based on 65nm MLC technology is the
world’s leading line of parallel NOR flash for embedded applications. It can be read, erased
and reprogrammed; and these operations can be performed using a single low voltage (2.7
to 3.6 V) supply. Upon power-up, the memory defaults to its array read mode.
The main memory array is divided into 64-Kword/128-Kbyte uniform blocks that can be
erased independently so that valid data can be preserved while old data is purged. Program
and Erase commands are written to the command interface of the memory. An on-chip
Program/Erase controller simplifies the process of programming or erasing the memory by
taking care of all of the special operations that are required to update the memory contents.
The end of a program or erase operation can be detected and any error condition can be
identified. The command set required to control the memory is consistent with JEDEC
standards.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the
memory. They allow simple connection to most microprocessors, often without additional
logic.
The M29EW supports Asynchronous Random Read and Page Read from all blocks of the
memory array. It also features an internal program buffer which improves throughput by
programming 512 words via one command sequence.
The M29EW contains a 128-word Extended Memory Block which overlaps addresses with
array block 0. The user can program this additional space; then protect it to permanently
secure its contents.
The device features different levels of hardware and software protection to secure blocks
from unwanted modification (program or erase):
http://www.DataSheet4U.net/
l Hardware protection:
– The VPP/WP# provides a hardware protection of either the highest (M29EWH) or
the lowest (M29EWL) block of the main memory array.
l Software protection:
– Volatile Protection
– Non-Volatile Protection
– Password Protection
– Password Access
The M29EW is offered in TSOP56 (14 x 20 mm) and Fortified BGA64 (11 x 13 mm, 1 mm
pitch) packages.
The memories are delivered with all the bits erased (set to ‘1’).
Also see Appendix B: Common Flash Interface (CFI) on page 112 and Table 5: Block
addresses on page 12 for a full list of the block addresses.
208045-11
7
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JS28F512M29EWLx

3 V supply flash memory

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