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PESD1CAN 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 PESD1CAN은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 PESD1CAN 기능
기능 CAN bus ESD protection diode
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PESD1CAN 데이터시트, 핀배열, 회로
PESD1CAN
CAN bus ESD protection diode
Rev. 04 — 15 February 2008
Product data sheet
1. Product profile
1.1 General description
PESD1CAN in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package designed to protect two automotive Controller Area Network (CAN) bus lines
from the damage caused by ElectroStatic Discharge (ESD) and other transients.
1.2 Features
I Due to the integrated diode structure only one small SOT23 package is needed to
protect two CAN bus lines
I Max. peak pulse power: PPP = 200 W at tp = 8/20 µs
I Low clamping voltage: VCL = 40 V at IPP = 1 A
I Ultra low leakage current: IRM < 1 nA
I Typ. diode capacitance matching: Cd/Cd = 0.1 %
I ESD protection up to 23 kV
I IEC 61000-4-2, level 4 (ESD)
I IEC 61000-4-5 (surge); IPP = 3 A at tp = 8/20 µs
I Small SMD plastic package
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1.3 Applications
I CAN bus protection
I Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
Cd
reverse standoff voltage
diode capacitance
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 24 V
- 11 17 pF
datasheet
p




PESD1CAN pdf, 반도체, 판매, 대치품
NXP Semiconductors
PESD1CAN
CAN bus ESD protection diode
6. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
IRM
VBR
Cd
Cd/Cd
VCL
rdif
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
diode capacitance
matching
clamping voltage
VRWM = 24 V
IR = 5 mA
f = 1 MHz; VR = 0 V
f = 1 MHz; VR = 0 V
f = 1 MHz; VR = 2.5 V
differential resistance
IPP = 1 A
IPP = 3 A
IR = 1 mA
Min
-
-
25.4
-
[1]
-
-
[2][3]
-
-
-
Typ
-
<1
27.8
11
0.1
0.1
-
-
-
Max
24
50
30.3
17
-
-
40
70
300
Unit
V
nA
V
pF
%
%
V
V
[1] Cd is the difference of the capacitance measured between pin 1 and pin 3 and the capacitance measured
between pin 2 and pin 3.
[2] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[3] Measured from pin 1 to 3 or 2 to 3.
http://www.DataSheet4U.net/
PESD1CAN_4
Product data sheet
Rev. 04 — 15 February 2008
© NXP B.V. 2008. All rights reserved.
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datasheet pdf - http://www.DataSheet4U.net/

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PESD1CAN 전자부품, 판매, 대치품
NXP Semiconductors
PESD1CAN
CAN bus ESD protection diode
7. Application information
The PESD1CAN is designed for the protection of two automotive CAN bus lines from the
damage caused by ESD and surge pulses. The device can be used for both, high-speed
CAN bus and fault-tolerant CAN bus protection. The PESD1CAN provides a surge
capability of up to 200 W per line for an 8/20 µs waveform.
SPLIT
CANH
CAN BUS
TRANSCEIVER
RT/2
CANL
Common
mode choke
(optional)
RT/2
CG
CAN
bus
21
PESD1CAN
3
006aaa473
Fig 8. Typical application: ESD protection of two automotive CAN bus lines
Circuit board layout and protection device placement:
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
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and surge transients. The following guidelines are recommended:
1. Place the PESD1CAN as close to the input terminal or connector as possible.
2. The path length between the PESD1CAN and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protection conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
PESD1CAN_4
Product data sheet
Rev. 04 — 15 February 2008
© NXP B.V. 2008. All rights reserved.
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datasheet pdf - http://www.DataSheet4U.net/

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