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PDF 2N6790 Data sheet ( Hoja de datos )
| Número de pieza | 2N6790 | |
| Descripción | 3.5A/ 200V/ 0.800 Ohm/ N-Channel Power | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
December 2001
2N6790
3.5A, 200V, 0.800 Ohm, N-Channel Power
MOSFET
The 2N6790 is an N-Channel enhancement mode silicon
gate power MOS field effect transistor designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. This device can be operated directly
from an integrated circuit.
Ordering Information
PART NUMBER
PACKAGE
BRAND
2N6790
TO-205AF
2N6790
NOTE: When ordering, include the entire part number.
Features
• 3.5A, 200V
• rDS(ON) = 0.800Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Packaging
JEDEC TO-205AF
G
S
DRAIN
(CASE)
SOURCE
GATE
©2001 Fairchild Semiconductor Corporation
2N6790 Rev. B
1 page  
2N6790
Typical Performance Curves Unless Otherwise Specified (Continued)
5.0
80µs PULSE TEST
4.25
3.75
3.0
2.25
1.50
TJ = -55oC
TJ = 25oC
TJ = 125oC
0.75
0
0 2 4 6 8 10 12 14
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
102
TJ = 25oC
TJ = 150oC
10
TJ = 150oC
TJ = 25oC
1
0 12 3
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
4
20
ID = 7A
15
10
VDS = 160V
VDS = 100V
VDS = 40V
5
0
0 4 8 12 16 20
Qg, TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2001 Fairchild Semiconductor Corporation
2N6790 Rev. B
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2N6790.PDF ] | |
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