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D612 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 D612
기능 2SD612
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D612 데이터시트, 핀배열, 회로
Ordering number:341G
Features
· High collector dissipation and wide ASO.
PNP/NPN Epitaxial Planar Silicon Transistor
2SB632, 632K/2SD612, 612K
25V/35V, 2A Low-Frequency
Power Amplifier Applications
Package Dimensions
unit:mm
2009B
[2SB632, 632K/2SD612, 612K]
( ) : 2SB632, 632K
1 : Emitter
2 : Collector
3 : Base
Specifications
JEDEC : TO-126
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
http://www.DataSheet4U.net/
Tc=25˚C
2SB632, D612
(–)25
(–)25
2SB632K, D612K
(–)35
(–)35
(–)5
(–)2
(–)3
1
10
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
min typ
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Brakdown Voltage
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=
B632, D612
B632K, D612K
B632, D612
B632K, D612K
(–)25
(–)35
(–)25
(–)35
Emitter-to-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V(BR)EBO
ICBO
IEBO
IE=(–)10µA, IC=0
VCB=(–)20V, IE=0
VEB=(–)4V, IC=0
(–)5
* : The 2SB632/2SD612 are classified by 500mA hFE as follows : 60 D 120 100 E 200 160 F 320
max
(–)1
(–)1
Unit
V
V
V
V
V
µA
µA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/90595MO (KOTO)/4017KI/D174MW, TS/E108, 8-2176 No.341–1/9
datasheet pdf - http://www.DataSheet4U.net/




D612 pdf, 반도체, 판매, 대치품
2SB632, 632K/2SD612, 612K
http://www.DataSheet4U.net/
Sample Application Circuit 1 : 8W pure complementary amplifier using the 2SB632K/2SD612K
[Specifications] Power supply : 100V AC supply transformer with no signal=28.8V.
Maximum output=(THD=5%)=25V, f=1kHz, RL=8, Rg=600Ω.
Parameter
Quiescent Current
(Collector Current)
Voltage Gain
Output Power
Total Harmonic Distortion
Input Resistance
Output Resistance
Symbol
ICCO
ID
IC
VG
VG
PO
THD
ri
ro
Output stage
Drive stage
First stage
Without NFB
With NFB
THD=5%
PO=1W
PO=1W
PO=1W
Conditions
typ Unit
14.0 mA
42.0 mA
1.4 mA
75 dB
40 dB
8.7 W
0.05 %
60 k
0.2
No.341–4/9
datasheet pdf - http://www.DataSheet4U.net/

4페이지










D612 전자부품, 판매, 대치품
2SB632, 632K/2SD612, 612K
Sample Application Circuit 2 : 2SD612-Used
4W Input Transtformer coupling Amplifier for Car Use.
[Specifications] VCC=13.2V, RL=4, Rg=600, f=1kHz.
Parameter
Quiescent Current
(Collector Current) Voltage Gain
Voltage Gain
Output Power
Total Harmonic Distortion
Input Impedance
Symbol
ICCO
ID
VG
VG
PO
THD
ri
Output stage
Drive stage
Without NFB
With NFB
THD=10%
PO=0.5W
PO=0.5W
Conditions
typ Unit
12.0 mA
9.0 mA
66 dB
49 dB
4.7 W
0.8 %
60 k
http://www.DataSheet4U.net/
Unit (resistance : , capacitance : F)
No.341–7/9
datasheet pdf - http://www.DataSheet4U.net/

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