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2N7000 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 2N7000
기능 N-Channel Enhancement-Mode Vertical DMOS FET
제조업체 Supertex Inc
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2N7000 데이터시트, 핀배열, 회로
Supertex inc.
2N7000
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
►Free from secondary breakdown
►Low power drive requirement
►Ease of paralleling
►Low CISS and fast switching speeds
►Excellent thermal stability
►Integral source-drain diode
►High input impedance and high gain
Applications
►Motor controls
Converters
Amplifiers
Switches
►Power supply circuits
►Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
The Supertex 2N7000 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from
thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Ordering Information
Part Number
Package Option Packing
2N7000-G
TO-92
1000/Bag
2N7000-G P002 TO-92
2000/Reel
2N7000-G P003 TO-92
2000/Reel
2N7000-G P005 TO-92
2000/Reel
2N7000-G P013 TO-92
2000/Reel
2N7000-G PO14 TO-92
2000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Absolute Maximum Ratings
Parameter
Value
Drain-to-Source voltage
Drain-to-Gate voltage
Gate-to-Source voltage
BVDSS
BVDGS
±30V
Operating and storage temperature -55°C to +150°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Product Summary
BVDSX/BVDGS
RDS(ON)
(max)
60V 5.0Ω
Pin Configuration
ID(ON)
(min)
75mA
SOURCE
DRAIN
GATE
TO-92
Product Marking
S i 2 N YY = Year Sealed
7 0 0 0 WW = Week Sealed
YYWW
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92
Typical Thermal Characteristics
Package
θja
TO-92
132OC/W
* Mounted on FR4 board; 25mm x 25mm x 1.57mm
Doc.# DSFP-2N7000
C062813
Supertex inc.
www.supertex.com




2N7000 pdf, 반도체, 판매, 대치품
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
1.1
1.0
0.9
-50
0 50 100
TJ (OC)
150
Transfer Characteristics
2.5
VDS = 25V
2.0 TA = -55OC
25OC
1.5
125OC
1.0
0.5
00 2 4 6 8 10
VGS (volts)
Capacitance vs. Drain-to-Source Voltage
100
f = 1MHz
75
50
CISS
25
COSS
0 CRSS
0 10 20 30 40
VDS (volts)
2N7000
On-Resistance vs. Drain Current
5.0
VGS = 4.5V
4.0
VGS = 10V
3.0
2.0
1.0
0
0 0.5 1.0 1.5 2.0 2.5
ID (amperes)
V(th) and RDS Variation with Temperature
1.6 1.9
1.4 1.6
RDS @ 10V, 1.0A
1.2
V(th) @ 1.0mA
1.3
1.0 1.0
0.8 0.7
0.6
-50
0 50 100
Tj (OC)
0.4
150
Gate Drive Dynamic Characteristics
10
8
VDS = 10V
40V
6
80 pF
4
2
40 pF
00 0.2
0.4 0.6
QG (nanocoulombs)
0.8
1.0
Doc.# DSFP-2N7000
C0628213
Supertex inc.
4 www.supertex.com

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