|
|
PDF NGTB15N120FLWG Data sheet ( Hoja de datos )
| Número de pieza | NGTB15N120FLWG | |
| Descripción | IGBT | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NGTB15N120FLWG (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
NGTB15N120FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for UPS
and solar applications. Incorporated into the device is a soft and fast
co−packaged free wheeling diode with a low forward voltage.
Features
• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• 10 ms Short Circuit Capability
• Low Gate Charge
• Soft, Fast Free Wheeling Diode
• These are Pb−Free Devices
Typical Applications
• Solar Inverter
• UPS Inverter
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited
by TJmax
Gate−emitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Short Circuit Withstand Time
VGE = 15 V, VCE = 500 V, TJ ≤ 150°C
Operating junction temperature
range
VCES
IC
ICM
IF
IFM
VGE
PD
TSC
TJ
1200
30
15
120
V
A
http://www.DataSheet4U.net/
A
A
30
15
120 A
$20
156
62.5
10
V
W
ms
−55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
15 A, 1200 V
VCEsat = 2.0 V
Eoff = 0.55 mJ
C
G
E
G
CE
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
15N120FL
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB15N120FLWG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Publication Order Number:
NGTB15N120FLW/D
datasheet pdf - http://www.DataSheet4U.net/
1 page  
NGTB15N120FLWG
TYPICAL CHARACTERISTICS
120 20
100
TJ = 25°C
15
80
TJ = 150°C
60 10
VCE = 600 V
40
5
20
0
012 3 456
0
0
40 80 120 160
VF, FORWARD VOLTAGE (V)
QG, GATE CHARGE (nC)
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
2.0
VCE = 600 V
VGE = 15 V
1.5
IC = 15 A
Rg = 10 W
1.0
0.5
0
0 20 40
1000
tf
Eon 100
td(off)
td(on)
Eoff
10
http://www.DataSheet4U.net/
VCE = 600 V
VGE = 15 V
IC = 15 A
Rg = 10 W
tr
60 80 100 120 140 160
1
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Switching Time vs. Temperature
2.5
2.0
1.5
1.0
0.5
0
8
1000
Eon
Eoff
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
12 16 20 24 28
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
32
100
10
1
8
tf
td(off)
td(on)
tr
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
12 16 20 24 28
IC, COLLECTOR CURRENT (A)
Figure 12. Switching Time vs. IC
32
http://onsemi.com
5
datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NGTB15N120FLWG.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NGTB15N120FLWG | IGBT | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |