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NGTB15N120LWG 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 NGTB15N120LWG은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 NGTB15N120LWG 기능
기능 IGBT ( Insulated Gate Bipolar Transistor )
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NGTB15N120LWG 데이터시트, 핀배열, 회로
NGTB15N120LWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low onstate voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged copackaged free wheeling diode with a
low forward voltage.
Features
Low Saturation Voltage using Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Low Gate Charge
5 ms ShortCircuit Capability
These are PbFree Devices
Typical Applications
Inverter Welding Machines
Microwave Ovens
Industrial Switching
Motor Control Inverter
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
IC
1200
30
15
Vhttp://www.DataSheet4U.net/
A
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM 120 A
IF
A
30
15
Diode pulsed current, Tpulse limited
by TJmax
Gateemitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
IFM
VGE
PD
100
$20
156
62.5
A
V
W
ShortCircuit Withstand Time
VGE = 15 V, VCE = 600 V, TJ 150°C
Operating junction temperature
range
Tsc
TJ
5
55 to +150
ms
°C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
15 A, 1200 V
VCEsat = 1.8 V
Eoff = 0.56 mJ
C
G
E
G
CE
TO247
CASE 340L
STYLE 4
MARKING DIAGRAM
15N120L
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGTB15N120LWG
Package Shipping
TO247 30 Units / Rail
(PbFree)
© Semiconductor Components Industries, LLC, 2012
August, 2012 Rev. 2
1
Publication Order Number:
NGTB15N120L/D
datasheet pdf - http://www.DataSheet4U.net/




NGTB15N120LWG pdf, 반도체, 판매, 대치품
NGTB15N120LWG
TYPICAL CHARACTERISTICS
16
200 V
14
400 V
600 V
12
10
8
6
4
2
0
0 25 50 75 100 125 150 175 200
QG, GATE CHARGE (nC)
Figure 7. Typical Gate Charge
3.5
3
VCE = 600 V
VGE = 15 V
2.5
IC = 15 A
Rg = 15 W
2
Eon
1.5
1 Eoff
0.5
0
0 20 40 60 80 100 120 140 160
TEMPERATURE (°C)
Figure 8. Energy Loss vs. Temperature
1000
100
td(on)
tf
td(off)
tr
6 VCE = 600 V
5
VGE = 15 V
TJ = 150°C
Rg = 15 W
4
3
Eon
10
VCE = 600 V
2 Eoff
VGE = 15 V
IC = 15 A
http://www.DataSheet4U.net/
1
1 Rg = 15 W
0
0 20 40 60 80 100 120 140 160
8 10 12 14 16 18 20 22 24 26 28 30 32
TEMPERATURE (°C)
Figure 9. Switching Time vs. Temperature
IC, COLLECTOR (A)
Figure 10. Energy Loss vs. IC
1000
100
td(on)
tf
td(off)
tr
10 VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 15 W
1
8 10 12 14 16 18 20 22 24 26 28 30 32
IC, COLLECTOR (A)
Figure 11. Switching Time vs. IC
6
VCE = 600 V
5
VGE = 15 V
IC = 15 A
4 TJ = 150°C
3
2
1
0
5 15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 12. Energy Loss vs. Rg
http://onsemi.com
4
datasheet pdf - http://www.DataSheet4U.net/

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NGTB15N120LWG 전자부품, 판매, 대치품
NGTB15N120LWG
http://www.DataSheet4U.net/
Figure 21. Definition of Turn On Waveform
http://onsemi.com
7
datasheet pdf - http://www.DataSheet4U.net/

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관련 데이터시트

부품번호상세설명 및 기능제조사
NGTB15N120LWG

IGBT ( Insulated Gate Bipolar Transistor )

ON Semiconductor
ON Semiconductor

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