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Datasheet NGTB15N60EG Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1NGTB15N60EGIGBT, Insulated Gate Bipolar Transistor

NGTB15N60EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching los
ON Semiconductor
ON Semiconductor		igbt


NGT Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NGTB05N60R2DT4GIGBT, Insulated Gate Bipolar Transistor

NGTB05N60R2DT4G IGBT 600V, 8A, N-Channel www.onsemi.com Features  Reverse Conducting II IGBT  IGBT VCE(sat)=1.65V (typ) [IC=5A, VGE=15V]  IGBT tf=95ns (typ) Diode VF=1.5V (typ) [IF=5A] Diode trr=70ns (typ) 5s Short Circuit Capability Applications  General Purpose I
ON Semiconductor
ON Semiconductor		igbt
2NGTB10N60FGN-Channel IGBT

Ordering number : ENA2283A NGTB10N60FG N-Channel IGBT 600V, 10A, VCE(sat);1.5V, TO-220F-3FS http://onsemi.com Features • IGBT VCE (sat)=1.5V typ. (IC=10A, VGE=15V) • IGBT IC=20A (Tc=25°C) • Adaption of full isolation type package • 5μs short circuit capability • Diode VF=1.3V typ.(IF
ON Semiconductor
ON Semiconductor		igbt
3NGTB10N60R2DT4GIGBT, Insulated Gate Bipolar Transistor

NGTB10N60R2DT4G IGBT 600V, 10A, N-Channel www.onsemi.com Features  Reverse Conducting II IGBT  IGBT VCE(sat)=1.7V (typ) [IC=10A, VGE=15V]  IGBT tf=65ns (typ) Diode VF=1.5V (typ) [IF=10A] Diode trr=90ns (typ) 5s Short Circuit Capability Applications  General Purpose
ON Semiconductor
ON Semiconductor		igbt
4NGTB15N120FLWGIGBT, Insulated Gate Bipolar Transistor

NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar
ON Semiconductor
ON Semiconductor		igbt
5NGTB15N120IHLWGIGBT, Insulated Gate Bipolar Transistor

NGTB15N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited
ON Semiconductor
ON Semiconductor		igbt
6NGTB15N120LWGIGBT, Insulated Gate Bipolar Transistor

NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited f
ON Semiconductor
ON Semiconductor		igbt
7NGTB15N135IHRWGIGBT, Insulated Gate Bipolar Transistor

NGTB15N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal sw
ON Semiconductor
ON Semiconductor		igbt



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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