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부품번호 | NGTB25N120IHLWG 기능 |
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기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 9 페이지수
NGTB25N120IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
Features
• Low Saturation Voltage using Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Case Temperature in IH Cooker Application
• Low Gate Charge
• These are Pb−Free Devices
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
IC
1200
50
25
V
http://www.DataSheet4U.net/
A
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM 200 A
IF A
50
25
Diode pulsed current, Tpulse limited
by TJmax
Gate−emitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
IFM
VGE
PD
200
$20
192
77
A
V
W
Operating junction temperature
range
TJ −55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
25 A, 1200 V
VCEsat = 1.85 V
Eoff = 0.8 mJ
C
G
E
G
CE
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
25N120IHL
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB25N120IHLWG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 2
1
Publication Order Number:
NGTB25N120IHLW/D
datasheet pdf - http://www.DataSheet4U.net/
NGTB25N120IHLWG
TYPICAL CHARACTERISTICS
16 2.0
14
12
400 V
200 V
600 V
1.8
VCE = 600 V
VGE = 15 V
1.6 IC = 25 A
1.4 Rg = 10 W
10 1.2
8 1.0
6 0.8
0.6
4
0.4
2 0.2
00
0 50 100 150 200 250
0 20 40 60 80 100 120 140 160
QG, GATE CHARGE (nC)
TEMPERATURE (°C)
Figure 7. Typical Gate Charge
Figure 8. Energy Loss vs. Temperature
1000
100
td(off)
tf
3.0
VCE = 600 V
2.5
VGE = 15 V
TJ = 150°C
Rg = 10 W
2.0
1.5
10
VCE = 600 V
VGE = 15 V
IC = 25 A
Rg = 10 W
1
0 20 40 60 80 100 120 140
TEMPERATURE (°C)
Figure 9. Switching Time vs. Temperature
160
1.0
0.5http://www.DataSheet4U.net/
0
10
14 18 22 26 30 34 38 42
IC, COLLECTOR (A)
Figure 10. Energy Loss vs. IC
1000
100
tf
td(off)
10 VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
1
10 14 18 22 26 30 34 38
IC, COLLECTOR (A)
Figure 11. Switching Time vs. IC
42
3.0
2.5
2.0
1.5
1.0
0.5
0
5
VCE = 600 V
VGE = 15 V
IC = 25 A
TJ = 150°C
15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 12. Energy Loss vs. Rg
http://onsemi.com
4
datasheet pdf - http://www.DataSheet4U.net/
4페이지 NGTB25N120IHLWG
http://www.DataSheet4U.net/
Figure 21. Definition of Turn On Waveform
http://onsemi.com
7
datasheet pdf - http://www.DataSheet4U.net/
7페이지 | |||
구 성 | 총 9 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NGTB25N120IHLWG | IGBT ( Insulated Gate Bipolar Transistor ) | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |