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NGTB25N120IHLWG 데이터시트 PDF




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부품번호 NGTB25N120IHLWG 기능
기능 IGBT ( Insulated Gate Bipolar Transistor )
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NGTB25N120IHLWG 데이터시트, 핀배열, 회로
NGTB25N120IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low onstate voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged copackaged free wheeling diode with a
low forward voltage.
Features
Low Saturation Voltage using Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Case Temperature in IH Cooker Application
Low Gate Charge
These are PbFree Devices
Typical Applications
Inductive Heating
Consumer Appliances
Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
IC
1200
50
25
V
http://www.DataSheet4U.net/
A
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM 200 A
IF A
50
25
Diode pulsed current, Tpulse limited
by TJmax
Gateemitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
IFM
VGE
PD
200
$20
192
77
A
V
W
Operating junction temperature
range
TJ 55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
25 A, 1200 V
VCEsat = 1.85 V
Eoff = 0.8 mJ
C
G
E
G
CE
TO247
CASE 340L
STYLE 4
MARKING DIAGRAM
25N120IHL
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGTB25N120IHLWG
Package Shipping
TO247 30 Units / Rail
(PbFree)
© Semiconductor Components Industries, LLC, 2012
August, 2012 Rev. 2
1
Publication Order Number:
NGTB25N120IHLW/D
datasheet pdf - http://www.DataSheet4U.net/




NGTB25N120IHLWG pdf, 반도체, 판매, 대치품
NGTB25N120IHLWG
TYPICAL CHARACTERISTICS
16 2.0
14
12
400 V
200 V
600 V
1.8
VCE = 600 V
VGE = 15 V
1.6 IC = 25 A
1.4 Rg = 10 W
10 1.2
8 1.0
6 0.8
0.6
4
0.4
2 0.2
00
0 50 100 150 200 250
0 20 40 60 80 100 120 140 160
QG, GATE CHARGE (nC)
TEMPERATURE (°C)
Figure 7. Typical Gate Charge
Figure 8. Energy Loss vs. Temperature
1000
100
td(off)
tf
3.0
VCE = 600 V
2.5
VGE = 15 V
TJ = 150°C
Rg = 10 W
2.0
1.5
10
VCE = 600 V
VGE = 15 V
IC = 25 A
Rg = 10 W
1
0 20 40 60 80 100 120 140
TEMPERATURE (°C)
Figure 9. Switching Time vs. Temperature
160
1.0
0.5http://www.DataSheet4U.net/
0
10
14 18 22 26 30 34 38 42
IC, COLLECTOR (A)
Figure 10. Energy Loss vs. IC
1000
100
tf
td(off)
10 VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
1
10 14 18 22 26 30 34 38
IC, COLLECTOR (A)
Figure 11. Switching Time vs. IC
42
3.0
2.5
2.0
1.5
1.0
0.5
0
5
VCE = 600 V
VGE = 15 V
IC = 25 A
TJ = 150°C
15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 12. Energy Loss vs. Rg
http://onsemi.com
4
datasheet pdf - http://www.DataSheet4U.net/

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NGTB25N120IHLWG 전자부품, 판매, 대치품
NGTB25N120IHLWG
http://www.DataSheet4U.net/
Figure 21. Definition of Turn On Waveform
http://onsemi.com
7
datasheet pdf - http://www.DataSheet4U.net/

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부품번호상세설명 및 기능제조사
NGTB25N120IHLWG

IGBT ( Insulated Gate Bipolar Transistor )

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