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부품번호 | NGTB30N120LWG 기능 |
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기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 9 페이지수
NGTB30N120LWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications. Offering
both low on−state voltage and minimal switching loss, the IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
Features
• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Low Gate Charge
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Inverter Welding Machines
• Microwave Ovens
• Industrial Switching
• Motor Control Inverter
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
IC
1200
60
30
V
http://www.DataSheet4U.net/
A
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM 240 A
IF A
60
30
Diode pulsed
by TJmax
current,
Tpulse
limited
Gate−emitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
IFM
VGE
PD
240
$20
260
104
A
V
W
Short−Circuit Withstand Time
VGE = 15 V, VCE = 600 V, TJ ≤ 150°C
Operating junction temperature range
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tsc
TJ
Tstg
TSLD
5
−55 to +150
−55 to +150
260
ms
°C
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 A, 1200 V
VCEsat = 1.75 V
Eoff = 1.0 mJ
C
G
E
G
CE
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
30N120L
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB30N120LWG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Publication Order Number:
NGTB30N120L/D
datasheet pdf - http://www.DataSheet4U.net/
NGTB30N120LWG
TYPICAL CHARACTERISTICS
140 20
120
100
TJ = 25°C
15
TJ = 150°C
80
10
60
VCE = 600 V
40
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VF, FORWARD VOLTAGE (V)
Figure 7. Diode Forward Characteristics
5
0
0 60 120 180 240 300 360 420 480
QG, GATE CHARGE (nC)
Figure 8. Typical Gate Charge
6 1000
5 Eon
td(off)
tf
4
VCE = 600 V
3
VGE = 15 V
IC = 30 A
Rg = 10 W
2
1
0
0 20 40 60
100
Eoff 10
VCE = 600 V
VGE = 15 V
http://www.DataSheet4U.net/
IC = 30 A
Rg = 10 W
1
80 100 120 140 160
0 20 40 60
td(on)
tr
80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Switching Time vs. Temperature
12
VCE = 600 V
10
VGE = 15 V
TJ = 150°C
Rg = 10 W
8
Eon
6
4 Eoff
2
0
16 24 32 40 48 56
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
1000
100
td(off)
tf
td(on)
tr
10
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
1
64 16 24 32 40 48 56 64
IC, COLLECTOR CURRENT (A)
Figure 12. Switching Time vs. IC
http://onsemi.com
4
datasheet pdf - http://www.DataSheet4U.net/
4페이지 NGTB30N120LWG
http://www.DataSheet4U.net/
Figure 22. Definition of Turn On Waveform
http://onsemi.com
7
datasheet pdf - http://www.DataSheet4U.net/
7페이지 | |||
구 성 | 총 9 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NGTB30N120LWG | IGBT ( Insulated Gate Bipolar Transistor ) | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |