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NGTB30N120LWG 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 NGTB30N120LWG은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 NGTB30N120LWG 기능
기능 IGBT ( Insulated Gate Bipolar Transistor )
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NGTB30N120LWG 데이터시트, 핀배열, 회로
NGTB30N120LWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications. Offering
both low onstate voltage and minimal switching loss, the IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged copackaged free wheeling diode with a
low forward voltage.
Features
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Low Gate Charge
5 ms ShortCircuit Capability
These are PbFree Devices
Typical Applications
Inverter Welding Machines
Microwave Ovens
Industrial Switching
Motor Control Inverter
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
IC
1200
60
30
V
http://www.DataSheet4U.net/
A
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM 240 A
IF A
60
30
Diode pulsed
by TJmax
current,
Tpulse
limited
Gateemitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
IFM
VGE
PD
240
$20
260
104
A
V
W
ShortCircuit Withstand Time
VGE = 15 V, VCE = 600 V, TJ 150°C
Operating junction temperature range
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tsc
TJ
Tstg
TSLD
5
55 to +150
55 to +150
260
ms
°C
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 A, 1200 V
VCEsat = 1.75 V
Eoff = 1.0 mJ
C
G
E
G
CE
TO247
CASE 340L
STYLE 4
MARKING DIAGRAM
30N120L
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGTB30N120LWG
Package Shipping
TO247 30 Units / Rail
(PbFree)
© Semiconductor Components Industries, LLC, 2012
September, 2012 Rev. 0
1
Publication Order Number:
NGTB30N120L/D
datasheet pdf - http://www.DataSheet4U.net/




NGTB30N120LWG pdf, 반도체, 판매, 대치품
NGTB30N120LWG
TYPICAL CHARACTERISTICS
140 20
120
100
TJ = 25°C
15
TJ = 150°C
80
10
60
VCE = 600 V
40
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VF, FORWARD VOLTAGE (V)
Figure 7. Diode Forward Characteristics
5
0
0 60 120 180 240 300 360 420 480
QG, GATE CHARGE (nC)
Figure 8. Typical Gate Charge
6 1000
5 Eon
td(off)
tf
4
VCE = 600 V
3
VGE = 15 V
IC = 30 A
Rg = 10 W
2
1
0
0 20 40 60
100
Eoff 10
VCE = 600 V
VGE = 15 V
http://www.DataSheet4U.net/
IC = 30 A
Rg = 10 W
1
80 100 120 140 160
0 20 40 60
td(on)
tr
80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Switching Time vs. Temperature
12
VCE = 600 V
10
VGE = 15 V
TJ = 150°C
Rg = 10 W
8
Eon
6
4 Eoff
2
0
16 24 32 40 48 56
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
1000
100
td(off)
tf
td(on)
tr
10
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
1
64 16 24 32 40 48 56 64
IC, COLLECTOR CURRENT (A)
Figure 12. Switching Time vs. IC
http://onsemi.com
4
datasheet pdf - http://www.DataSheet4U.net/

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NGTB30N120LWG 전자부품, 판매, 대치품
NGTB30N120LWG
http://www.DataSheet4U.net/
Figure 22. Definition of Turn On Waveform
http://onsemi.com
7
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부품번호상세설명 및 기능제조사
NGTB30N120LWG

IGBT ( Insulated Gate Bipolar Transistor )

ON Semiconductor
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