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PDF IXA60IF1200NA Data sheet ( Hoja de datos )
| Número de pieza | IXA60IF1200NA | |
| Descripción | XPT IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IXA60IF1200NA (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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IXA60IF1200NA
XPT IGBT
Copack
I C25 =
VCES
=
V =CE(sat)typ
88 A
1200 V
1.8 V
Part number
IXA60IF1200NA
C (3)
(G) 2
Features / Advantages:
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
E (1+4)
Applications:
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
Package:
● Housing: SOT-227B (minibloc)
●rIndustry standard outline
●rCu base plate internal DCB isolated
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
IGBT
Symbol
VCES
VGES
IC25
I C90
Ptot
I CES
Definition
Collector emitter voltage
Maximum DC gate voltage
Collector current
Total power dissipation
Collector emitter leakage current
I GES
VCE(sat)
Gate emitter leakage current
Collector emitter saturation voltage
VGE(th)
Q Gon
t d(on)
tr
t d(off)
tf
Eon
Eoff
RBSOA
SCSOA
t SC
I SC
RthJC
Gate emitter threshold voltage
Total gate charge
Turn-on delay time
Current rise time
Turn-off delay time
Current fall time
Turn-on energy per pulse
Turn-off energy per pulse
Reverse bias safe operation area
Short circuit safe operation area
Short circuit duration
Short circuit current
Thermal resistance juntion to case
Conditions
VGE = 0 V
TVJ = 25°C
http://www.DataSheet4U.net/
TVJ = 25°C
TC = 25°C
VCE = VCES ; VGE = 0 V
TC =
TVJ =
TVJ =
90°C
25°C
25°C
TVJ = 125 °C
VCE = 0 V; VGE = ±20 V
IC = 55 A; VGE = 15 V
TVJ = 25°C
TVJ = 125 °C
IC = 2 mA; VGE = VCE
VCE = 600 V; VGE = 15 V; IC = 50 A
Inductive load
VCE = 600 V; IC = 50 A
VGE = ±15 V; RG= 15 Ω
VGE = 15 V; RG = 15 Ω
VCEK = 1200 V
TVJ = 125 °C
TVJ = 125°C
Ratings
min. typ. max.
1200
±20
88
56
290
0.1
0.1
500
1.8 2.1
2.1
5.4 6 6.5
190
70
40
250
100
4.5
5.5
150
Unit
V
V
A
A
W
mA
mA
nA
V
V
V
nC
ns
ns
ns
ns
mJ
mJ
A
VCE = 900 V; VGE= ±15 V
RG = 15 Ω ; non-repetitive
TVJ = 125°C
10 µs
200 A
0.43 K/W
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20100623a
datasheet pdf - http://www.DataSheet4U.net/
1 page  
IXA60IF1200NA
100
VGE = 15 V
80
60
IC
[A] 40
TVJ = 25°C
TVJ = 125°C
20
0
012
VCE [V]
Fig. 1 Typ. output characteristics
3
100
80
IC 60
[A]
40
20 TVJ = 125°C
TVJ = 25°C
0
5 6 7 8 9 10 11 12 13
VGE [V]
Fig. 3 Typ. tranfer characteristics
10
8
6
E
RG = 15
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
Eon
Eoff
[mJ] 4
http://www.DataSheet4U.net/
2
0
0 20 40 60 80 100 120
IC [A]
Fig. 5 Typ. switching energy vs. collector current
100
80
VGE = 15 V
17 V
19 V
13 V
11 V
60 TVJ = 125°C
IC
[A] 40
20
9V
0
0123
VCE [V]
Fig. 2 Typ. output characteristics
20
IC = 50 A
VCE = 600 V
15
4
VGE 10
[V]
5
0
0 40 80 120 160 200
QG [nC]
Fig. 4 Typ. turn-on gate charge
240
6.0
5.5 Eoff
E
5.0
[mJ]
4.5
Eon
IC = 50 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
4.0
12 16 20 24 28 32
RG [ ]
Fig. 6 Typ. switching energy vs. gate resistance
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20100623a
datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXA60IF1200NA.PDF ] | |
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