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PDF AP04N70BI-H-HF Data sheet ( Hoja de datos )
| Número de pieza | AP04N70BI-H-HF | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP04N70BI-H-HF (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Advanced Power
Electronics Corp.
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
G
AP04N70BI-H-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BVDSS
700V
RDS(ON)
2.4Ω
ID 4A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies, DC-
AC converters and high current high speed switching circuits.
G
DS
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
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Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
EAS
IAR
TSTG
TJ
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Rating
700
+30
4
2.5
15
33
0.26
8
4
-55 to 150
-55 to 150
Value
3.8
65
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Units
℃/W
℃/W
1
201008184
datasheet pdf - http://www.DataSheet4U.net/
1 page  
AP04N70BI-H-HF
16
14
12 I D =4A
10 VDS =320V
VDS =400V
8 VDS =480V
6
4
2
0
0 5 10 15 20
Q G , Total Gate Charge (nC)
25
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
100
Coss
Crss
1
1 6 11 16 21 26 31
V DS (V)
Fig 10. Typical Capacitance Characteristics
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12
10
8
T j =150 o C
T j = 25 o C
6
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
5
4
3
2
1
0
-50
0
50 100 150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
datasheet pdf - http://www.DataSheet4U.net/
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP04N70BI-H-HF.PDF ] | |
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