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PDF BU508AT Data sheet ( Hoja de datos )
| Número de pieza | BU508AT | |
| Descripción | NPN SILICON PLANAR POWER TRANSISTOR | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BU508AT (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR POWER TRANSISTOR
BU508AT
TO-220
Plastic Package
High Voltage, High-Speed Switching Transistor
Intended for use in Horizontal Deflection Circuits of Colour Televisions
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage
Collector Current (DC)
Collector Current (Peak)
Base Current (DC)
Base Current (Peak)
Reverse Base Current (DC or average
over any 20 ms period)
Reverse Base Current (Peak Value)
Power Dissipation upto Tc=25ºC
Operating and Storage Junction
Temperature Range
*Turn off Current
SYMBOL
VCES
VCEO
IC
ICM
IB
IBM
-IB(AV)
*-IBM
Ptot
Tj, Tstg
http://www.DataSheet4U.net/
VALUE
1500
700
8
15
4
6
100
5
60
- 65 to +150
UNIT
V
V
A
A
A
A
mA
A
W
ºC
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Cut off Current
**ICES
VCE=VCES max, VBE=0
MIN
Emitter Cut off Current
Collector Emitter Sustaining Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Transition Frequency
Collector Capacitance
IEBO
*VCEO(sus)
*hFE
*VCE(sat)
*VBE(sat)
fT
CC
**Measured with half-sinewave Voltage (curve tracer)
*Pulse Test: Pulse Width=5ms, Duty Cycle<10%
Tj=125ºC
VCE=VCES max, VBE=0
VEB=6V, IC=0
IC=100mA, IB=0, L=25mH
IC=4.5A, VCE=5V
IC=4.5A, IB=2A
IC=4.5A, IB=2A
IC=0.1A, VCE=5V, f=5MHz
IE=ie=0, VCB=10V, f=1MHz
700
2.25
TYP
7
125
MAX
1.0
2.0
10
1.0
1.3
UNIT
mA
mA
mA
V
V
V
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 3
datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BU508AT.PDF ] | |
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