IRFP460B Datasheet PDF - Vishay Siliconix
| Part Number | IRFP460B | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | Vishay Siliconix | |
| Logo |  |
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There is a preview and IRFP460B download ( pdf file ) link at the bottom of this page. Total 8 Pages | ||
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www.vishay.com
IRFP460B, SiHG460B
Vishay Siliconix
D Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. at 25 °C ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
550
VGS = 10 V
170
14
28
Single
0.25
D
TO-247AC
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
FEATURES
• Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
- Fast Switching
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
APPLICATIONS
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargershttp://www.DataSheet4U.net/
• SMPS
- Power Factor Correction (PFC)
TO-247AC
IRFP460BPbF
SiHG460B-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dtd
TJ = 125 °C
EAS
PD
TJ, Tstg
dV/dt
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 10 mH, Rg = 25 , IAS = 7.5 A.
c. 1.6 mm from case.
d. ISD ID, starting TJ = 25 °C.
LIMIT
500
± 20
30
20
13
62
2.2
281
278
- 55 to + 150
24
0.36
300c
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S12-0812-Rev. B, 16-Apr-12
1
Document Number: 91502
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
datasheet pdf - http://www.DataSheet4U.net/
|
| |
 
www.vishay.com
IRFP460B, SiHG460B
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 12 - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 13 - Switching Time Waveforms
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T
IAS
0.01 Ω
+
- VDD
Fig. 14 - Unclamped Inductive Test Circuit
http://www.DataSheet4U.net/
10 V
QGS
VG
QG
QGD
Charge
Fig. 16 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 17 - Gate Charge Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 15 - Unclamped Inductive Waveforms
S12-0812-Rev. B, 16-Apr-12
5
Document Number: 91502
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
datasheet pdf - http://www.DataSheet4U.net/
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRFP460B electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRFP460B.PDF Datasheet ] | |
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