Datasheet.kr   

NCV8873 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 NCV8873은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 NCV8873 자료 제공

부품번호 NCV8873 기능
기능 Automotive Grade Non-Synchronous Boost Controller
제조업체 ON Semiconductor
로고 ON Semiconductor 로고


NCV8873 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 11 페이지수

미리보기를 사용할 수 없습니다

NCV8873 데이터시트, 핀배열, 회로
NCV8873
Automotive Grade
Non-Synchronous Boost
Controller
The NCV8873 is an adjustable output nonsynchronous boost
controller which drives an external Nchannel MOSFET. The device
uses peak current mode control with internal slope compensation. The
IC incorporates an internal regulator that supplies charge to the gate
driver.
Protection features include internallyset softstart, undervoltage
lockout, cyclebycycle current limiting and thermal shutdown.
Additional features include low quiescent current sleep mode and
externallysynchronizable switching frequency.
Features
Peak Current Mode Control with Internal Slope Compensation
0.2 V $3% Reference Voltage for Constant Current Loads
Fixed Frequency Operation
Wide Input Voltage Range of 3.2 V to 40 V, 45 V Load Dump
Input Undervoltage Lockout (UVLO)
Internal SoftStart
Low Quiescent Current in Sleep Mode
CyclebyCycle Current Limit Protection
HiccupMode Overcurrent Protection (OCP)
Thermal Shutdown (TSD)
This is a PbFree Device
www.onsemi.com
8
1
SOIC8
D SUFFIX
CASE 751
MARKING
DIAGRAM
8
8873xx
ALYW
G
1
8873xx = Specific Device Code
xx = 00 or 01
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = PbFree Package
PIN CONNECTIONS
EN/SYNC 1
ISNS 2
GND 3
GDRV 4
8 VFB
7 VC
6 VIN
5 VDRV
(Top View)
ORDERING INFORMATION
Device
Package
Shipping
NCV887300D1R2G SOIC8 2500 / Tape &
(PbFree)
Reel
NCV887301D1R2G SOIC8 2500 / Tape &
(PbFree)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
August, 2016 Rev. 6
1
Publication Order Number:
NCV8873/D




NCV8873 pdf, 반도체, 판매, 대치품
NCV8873
ELECTRICAL CHARACTERISTICS (40°C < TJ < 150°C, 3.2 V < VIN < 40 V, unless otherwise specified) Min/Max values are
guaranteed by test, design or statistical correlation.
Characteristic
Symbol
Conditions
Min Typ Max Unit
GENERAL
Quiescent Current, Sleep Mode
Quiescent Current, Sleep Mode
Quiescent Current, No switching
Quiescent Current, Switching,
normal operation
Iq,sleep
Iq,sleep
Iq,off
Iq,on
VIN = 13.2 V, EN = 0, TJ = 25°C
VIN = 13.2 V, EN = 0, 40°C < TJ < 125°C
Into VIN pin, EN = 1, No switching
Into VIN pin, EN = 1, Switching
2.0
mA
2.0 6.0 mA
1.5 2.5 mA
4.0 6.0 mA
OSCILLATOR
Minimum pulse width
Maximum duty cycle
ton,min
Dmax
YY = 00
YY = 01
90 115 140
84 86.5 89
85 87.5 90
ns
%
Switching frequency
fs YY = 00
YY = 01
900 1000 1100
360 400 440
kHz
Softstart time
tss From start of switching with VFB = 0 until
ms
reference voltage = VREF
YY = 00
1.3 1.6 1.9
YY = 01
3.3 4.0 4.7
Softstart delay
Slope compensating ramp
tss,dly
Sa
From EN 1 until start of switching with
VFB = 0 with floating VC pin
YY = 00
YY = 01
ms
240 280
114 130 146 mV/ms
25 30 35
ENABLE/SYNCHRONIZATION
EN/SYNC pulldown current
EN/SYNC input high voltage
EN/SYNC input low voltage
EN/SYNC timeout ratio
IEN/SYNC
VEN/SYNC = 5 V
5.0 10
mA
Vs,ih
2.0 5.0
V
Vs,il 0 800 mV
%ten
From SYNC falling edge, to oscillator con-
trol (EN high) or shutdown (EN low), Per-
cent of typical switching frequency
350
%
SYNC minimum frequency ratio
SYNC maximum frequency
Synchronization delay
%fsync,min
fsync,max
ts,dly
Percent of fs
From SYNC falling edge to GDRV falling
edge under open loop conditions.
− − 80 %
1.1
MHz
50 100 ns
Synchronization duty cycle
CURRENT SENSE AMPLIFIER
Dsync
25 75 %
Lowfrequency gain
Bandwidth
ISNS input bias current
Current limit threshold voltage
Acsa
BWcsa
Isns,bias
Vcl
Inputtooutput gain at dc, ISNS v 1 V
Gain of Acsa 3 dB
Out of ISNS pin
Voltage on ISNS pin
YY = 00
YY = 01
0.9 1.0 1.1
V/V
2.5
MHz
30 50 mA
360 400 440
180 200 220
mV
Current limit,
Response time
Overcurrent protection,
Threshold voltage
tcl
%Vocp
CL tripped until GDRV falling edge,
VISNS = Vcl(typ) + 60 mV
Percent of Vcl
80 125
125 150 175
ns
%
Overcurrent protection,
Response Time
tocp From overcurrent event, Until switching
stops, VISNS = VOCP + 40 mV
80 125 ns
www.onsemi.com
4

4페이지










NCV8873 전자부품, 판매, 대치품
NCV8873
TYPICAL PERFORMANCE CHARACTERISTICS
7
6 TJ = 25°C
5
4
3
2
1
0
0 1 234 56
Venable, VOLTAGE (V)
Figure 8. Enable Pulldown Current vs. Voltage
8.0
7.5
7.0
6.5
6.0
5.5
5.0
40
10 60 110
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Enable Pulldown Current vs.
Temperature
160
www.onsemi.com
7

7페이지


구       성 총 11 페이지수
다운로드[ NCV8873.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
NCV8870

Automotive Grade Non-Synchronous Boost Controller

ON Semiconductor
ON Semiconductor
NCV8871

Automotive Grade Non-Synchronous Boost Controller

ON Semiconductor
ON Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵