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Número de pieza | 2SA1049 | |
Descripción | Silicon PNP Epitaxial Type Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SA1049 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1049
2SA1049
Audio Frequency Amplifier Applications
Unit: mm
• Small package.
• High breakdown voltage: VCEO = −120 V
• High hFE: hFE = 200~700
• Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
• Low noise: NF = 1dB (typ.), 10dB (max)
• Complementary to 2SC2459.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−120
V
Collector-emitter voltage
VCEO
−120
V
Emitter-base voltage
VEBO −5 V
Collector current
IC
−100
mA
Base current
IB
−20 mA
JEDEC
―
Collector power dissipation
PC
200 mW
JEITA
―
Junction temperature
Storage temperature range
Tj 125 °C
Tstg
−55~125
°C
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
ICBO
VCB = −120 V, IE = 0
IEBO
VEB = −5 V, IC = 0
hFE
(Note)
VCE = −6 V, IC = −2 mA
VCE (sat)
fT
Cob
NF
IC = −10 mA, IB = −1 mA
VCE = −6 V, IC = −1 mA
VCB = −10 V, IE = 0, f = 1 MHz
VCE = −6 V, IC = −0.1 mA
f = 1 kHz, RG = 10 kΩ
Note: hFE classification GR: 200~400, BL: 350~700
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
200 ⎯ 700
⎯ ⎯ −0.3 V
⎯ 100 ⎯ MHz
⎯ 4 ⎯ pF
⎯ 1.0 10 dB
1 2007-11-01
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2SA1049.PDF ] |
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