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SIS436DN 데이터시트 PDF




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기능 N-Channel MOSFET
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SIS436DN 데이터시트, 핀배열, 회로
New Product
N-Channel 25-V (D-S) MOSFET
SiS436DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0105 at VGS = 10 V
25
0.013 at VGS = 4.5 V
ID (A)a, g
16
16
Qg (Typ.)
6.7 nC
PowerPAK® 1212-8
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3
G
4
Bottom View
Ordering Information: SiS436DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen III Power MOSFET
• 100 % Rg Tested
100 % UIS Tested
APPLICATIONS
• DC/DC Conversion
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1 mH
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Limit
25
± 20
16a, g
16g
13.6b, c
10.7b, c
32g
15
11.25
16a, g
2.9b, c
27.7
17.7
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
29
3.6
Maximum
36
4.5
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
g. Package limited.
Document Number: 64735
S09-0320-Rev. A, 02-Mar-09
www.vishay.com
1
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SIS436DN pdf, 반도체, 판매, 대치품
SiS436DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.05
TJ = 150 °C
10
TJ = 25 °C
1
0.04
0.03
ID = 10 A
0.1
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.02
TJ = 125 °C
0.01
TJ = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
120
0.2 96
- 0.1
- 0.4
- 0.7
ID = 5 mA
ID = 250 µA
72
48
24
- 1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power (Junction-to-Ambient)
10
1
0.1
TA = 25 °C
Single Pulse
1 ms
10 ms
BVDSS Limited
100 ms
1s
10 s
DC
0.01
0.01 0.1 1 10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 64735
S09-0320-Rev. A, 02-Mar-09

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SIS436DN 전자부품, 판매, 대치품
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1

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SIS436DN

N-Channel MOSFET

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