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SIS444DN 데이터시트 PDF




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기능 N-Channel MOSFET
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SIS444DN 데이터시트, 핀배열, 회로
New Product
N-Channel 30 V (D-S) MOSFET
SiS444DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () Max.
0.0033 at VGS = 10 V
0.0043 at VGS = 4.5 V
ID (A)f
35g
35g
Qg (Typ.)
33.5 nC
PowerPAK® 1212-8
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3G
4
Bottom View
Ordering Information:
SiS444DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Motor Control
• Industrial
• Load Switch
• ORing
D
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
PD
TJ, Tstg
Limit
30
± 20
35g
35g
24.9a, b
20a, b
70
35g
3.3a, b
20
20
52
43
3.7a, b
3.1a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, e
t 10 s
Maximum Junction-to-Case (Drain)
Steady State
Symbol
RthJA
RthJC
Typical
24
1.9
Maximum
33
2.4
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on TC = 25 °C.
g. Package limited.
Document Number: 63276
www.vishay.com
S11-1379-Rev. A, 11-Jul-11
1
THE
PRODUCTS
DESCRIBED
HEREIN
AND
THIS
This document is
DOCUMENT ARE
subject to change without notice.
SUBJECT TO SPECIFIC DISCLAIMERS,
SET
FFOreReTHDaAtTaswhwewe.tvihshttapy:./c/womw/wdo.dc?a9ta1s0h0e0et4u.com/




SIS444DN pdf, 반도체, 판매, 대치품
New Product
SiS444DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.015
10
TJ = 150 °C
1
TJ = 25 °C
0.012
0.009
ID = 10 A
0.1
0.01
0.001
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.006
0.003
TJ = 25 °C
TJ = 125 °C
0.000
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.4
0.2
0
- 0.2
- 0.4
- 0.6
ID = 5 mA
ID = 250 μA
100
80
60
40
20
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10 100
Time (s)
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
10 ID Limited
100 μs
1 Limited by RDS(on)*
1 ms
10 ms
100 ms
0.1 1 s
10 s
TC = 25 °C
Single Pulse
0.01
0.01
0.1
DC
BVDSS Limited
1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
Document Number: 63276
4 S11-1379-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIS444DN 전자부품, 판매, 대치품
Disclaimer
Legal Disclaimer Notice
Vishay
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1

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부품번호상세설명 및 기능제조사
SIS444DN

N-Channel MOSFET

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