SIS472DN Datasheet PDF - Vishay
| Part Number | SIS472DN | |
| Description | N-Channel MOSFET | |
| Manufacturers | Vishay | |
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There is a preview and SIS472DN download ( pdf file ) link at the bottom of this page. Total 13 Pages | ||
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N-Channel 30 V (D-S) MOSFET
SiS472DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
RDS(on) ()
0.0089 at VGS = 10 V
0.0124 at VGS = 4.5 V
ID (A)a, g
20
20
Qg (Typ.)
9.8 nC
PowerPAK® 1212-8
3.30 mm
S
1S
3.30 mm
2
S
3G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information: SiS472DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Optimized for High-Side Synchronous
Rectifier Operation
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
D
• Notebook CPU Core
- High-Side Switch
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
30
± 20
20g
20g
15b, c
12b, c
50
20g
3.2b, c
21
22
28
18
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
29
3.6
36
°C/W
4.5
Notes:
a. Base on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK® 1212 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
g. Package limited.
Document Number: 67307
S10-2882-Rev. A, 20-Dec-10
www.vishay.com
1
Free Datasheet http://www.datasheet4u.com/
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
SiS472DN
Vishay Siliconix
40
30
Package Limited
20
10
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
35 2.0
28 1.6
21 1.2
14 0.8
7 0.4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
0.0
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67307
S10-2882-Rev. A, 20-Dec-10
www.vishay.com
5
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| Information | Total 13 Pages | |
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